Related papers: Bandgap renormalization of modulation doped quantu…

The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to several applications of quantum dots. We present a convenient…

We consider free electrons in rectangular quantum dots, with either hard wall boundary conditions or anharmonic confinement. In both cases, due to finite size effects, a homogeneous electric field applied along one of the rectangular axis…

We calculate the single-particle states of a two-dimensional electron gas (2DEG) in a perpendicular quantizing magnetic field, which is periodic in one direction of the electron layer. We discuss the modulation of the electron density in…

We consider quantum wire arrays consisting of GaAs rods embedded in Al$_{x}$Ga$_{1-x}$As and disposed in sites of a square or triangular lattice. The electronic and hole spectra around the conduction band bottom and the valence band top are…

A theoretical interpretation of the photoluminescence excitation spectra of self-organized polar GaN/(Al,Ga)N quantum dots is proposed. A numerical method assuming a realistic shape of the dots and including the built-in electric field…

We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed.…

Electron behavior in doped Mott systems continues to be a major unsolved problem in quantum many-electron physics. A central issue in understanding the universal Mott behavior in a variety of complex systems is to understand the nature of…

We demonstrate an electrically tunable two dimensional photonic crystal nanocavity containing InAs self assembled quantum dots. Photoluminescence and electroluminescence measurements are combined to probe the cavity mode structure and…

We propose a novel concept of achieving silicon quantum dots with radiative rates enhanced by more than two orders of magnitude up to the values characteristic for direct band gap semiconductors. Our tight-binding simulations show how the…

The photoluminescence (PL) spectrum of modulation-doped GaAs/AlGaAs quantum wells (MDQW) and heterojunctions (HJ) is studied under a magnetic field ($B_{\|}$) applied parallel to the two-dimensional electron gas (2DEG) layer. The effect of…

External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole…

A specific structure of doped graphene with substituted silicon impurity is introduced and ab. initio density-functional approach is applied for energy band structure calculation of proposed structure. Using the band structure calculation…

Here, we investigate phonon mode- and electron band-selective electron-phonon couplings in centrosymmetric 1T$'$-MoTe$_2$ using time- and angle-resolved photoemission spectroscopy combined with frequency-domain analysis. Femtosecond…

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to…

A semiconductor quantum dot mimics a two-level atom. Performance as a single photon source is limited by decoherence and dephasing of the optical transition. Even with high quality material at low temperature, the optical linewidths are a…

We present an exact diagonalization study of the single particle spectral function in the so-called t-t'-t''-J model in 2D. As a key result, we find that unlike the `pure' t-J model, hole doping leads to a major reconstruction of the…

The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy.…

This paper reports on a novel compact, low-loss bending technique for additively manufactured dielectric image lines between 140 GHz and 220 GHz. Conventional bending approaches require either large curvature radii or technologically…

The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence…