Related papers: Metallic low-temperature resistivity in 2D over an…
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by…
We report a detailed scaling analysis of resistivity \rho(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and…
The electrical resistivity of a pure sample of a thin metallic film is found to depend on the boundary conditions. This conclusion is supported by a free-electron model calculation and confirmed by an ab initio relativistic…
Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $\rho$. The relaxation time $\tau_{\rm…
Zero differential resistance state is found in response to direct current applied to 2D electron systems at strong magnetic field and low temperatures. Transition to the state is accompanied by sharp dip of negative differential resistance,…
We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…
The normal-state in-plane resistivity below the zero-field superconducting transition temperature $T_c$ and the upper critical field Hc2 were measured by suppressing superconductivity in pulsed magnetic fields for K0.70Fe1.46Se1.85Te0.15.…
We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a…
Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a…
We propose that the observed low density ``insulating'' phase of a 2D semiconductor system, with the carrier density being just below ($n < n_c$) the so-called critical density where the derivative of resistivity changes sign at low…
The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…
In the dilute two-dimensional electron system in silicon, we show that the temperature below which Shubnikov-de Haas oscillations become apparent is approximately the same as the temperature below which an exponential decrease in resistance…
We report the observation of metallic-like behavior at low temperatures and zero magnetic field in two dimensional (2D) electrons in an AlAs quantum well. At high densities the resistance of the sample decreases with decreasing temperature,…
Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be…
The focus of this paper is the vanishing of the thermal expansion in certain diamond-like semiconductors. In silicon becomes zero at T = 122. K. In germanium the situation is less clear. Previous investigations show that in natural…
We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, $0.16 \times 10^{10}…
Laser melting of semiconductors has been observed for almost 40 years; surprisingly, it is not well understood where most theoretical simulations show a laser-induced thermal process. $\textit{Ab initio}$ nonadiabatic simulations based on…
With decreasing density $n_s$ the thermopower $S$ of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density…
We show that the two-dimensional metallic state in Si-MOS samples persists over a wide range of temperatures (16 mK to 8 K), sample peak mobilities (varying by a factor of 8), carrier densities (0.8 to $35\times 10^{11}$ cm$^{-2}$) and…
The great practical utility has motivated extensive efforts to discover ultra-low resistance electrical conductors and superconductors in ambience. Here we report the observation of vanishingly small electrical resistance at the ambient…