Related papers: $\Psi=0$ at a sharp semiconductor/insulator interf…
The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling down towards sub-3nm nodes. However, a multiscale simulation…
Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap…
Electromagnetic wave is reflected and refracted at interfaces, satisfying Fresnel-Snell law which is required by conservations of energy and momentum. If the incident angle is lower than the critical angle, we can use this Fresnel-Snell…
A band gap for electronic states in crystals governs various properties of solids, such as transport, optical and magnetic properties. Its estimation and control have been an important issue in solid state physics. The band gap can be…
GaP/Si(100) is considered as pseudomporphic virtual substrate for III/V-on-Si integration in order to reduce defects related to polar-on-nonpolar heteroepitaxy. The atomic structure of the GaP/Si(100) heterointerface is decisive to yield…
Band offsets at semiconductor-oxide interfaces are determined through a scheme based on hybrid density functionals, which incorporate a fraction $\alpha$ of Hartree-Fock exchange. For each bulk component, the fraction $\alpha$ is tuned to…
The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical…
Starting from the general modal solutions for a homogeneous layer of arbitrary material and crystalline symmetry, a matrix formalism is developed to establish the semi analytical expressions of the surface impedance matrices (SIM) for a…
The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power…
We investigate physical properties of an Anderson impurity embedded in the bulk of a topological insulator. The slave-boson mean-field approximation is used to account for the strong electron correlation at the impurity. Different from the…
Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets,…
A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap $\Delta$ between the conduction and valence bands. In particular, a self…
Strongly correlated analogues of topological insulators have been explored in systems with purely on-site symmetries, such as time-reversal or charge conservation. Here, we use recently developed tensor network tools to study a quantum…
Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…
For matter wave scattering from passive quantum obstacles, we propose a phase diagram in terms of phase and modulus of scattering coefficients to explore all possible directional scattering patterns. In the phase diagram, we can not only…
Optically active quantum defects play an important role in quantum sensing, computing, and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to…
In quantum technologies, point defects in semiconductors are becoming more significant. Understanding the frequency, intensity, and polarization of the zero phonon line is important. The last two properties are the subject of this paper. I…
Recently, the EuS/InAs interface has attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional…
We consider an infinite bi-material plane containing a semi-infinite crack situated on a soft imperfect interface. The crack is loaded by a general asymmetrical system of forces distributed along the crack faces. On the basis of the weight…
We show that if a topological insulator is truncated along a curve that separates the plane in two sufficiently large regions, then the edge system admits absolutely continuous spectrum. Our approach combines a recent version of the…