Related papers: Modification of 1D Ballistic Transport using an At…
Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…
Electronic Mach-Zehnder interferometers in the Quantum Hall (QH) regime are currently discussed for the realization of quantum information schemes. A recently proposed device architecture employs interference between two co-propagating edge…
We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…
In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 8…
Extraneous high frequency chip modes parasitic to superconducting quantum circuits can result in decoherence when these modes are excited. To suppress these modes, superconducting air bridges (AB) are commonly used to electrically connect…
The ballistic motion of electrons in graphene encapsulated in hexagonal boron nitride (hBN) promises exciting opportunities for electron-optics devices. A narrow electron beam is desired, with both the mean free path and coherence length…
Transport measurements are presented on a class of electrostatically defined lateral dots within a high mobility two dimensional electron gas (2DEG). The new design allows Coulomb Blockade(CB) measurements to be performed on a single…
Atomic Force Microscopy (AFM) allows to probe matter at atomic scale by measuring the perturbation of a nanomechanical oscillator induced by near-field interaction forces. The quest to improve sensitivity and resolution of AFM has forced…
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…
Nanoscale optoelectronic components achieve functionality via spatial variation in electronic structure induced by composition, defects, and dopants. To dynamically change the local band alignment and influence defect states, a scanning…
The image-charge detection provides a new direct method for the detection of the Rydberg transition in electrons trapped on the surface of liquid helium. The interest in this method is motivated by the possibility to accomplish the spin…
We describe a first principles method to calculate scanning tunneling microscopy (STM) images, and compare the results to well-characterized experiments combining STM with atomic force microscopy (AFM). The theory is based on density…
The ability to probe a materials electromechanical functionality on the nanoscale is critical to applications from energy storage and computing to biology and medicine. Voltage modulated atomic force microscopy (VM-AFM) has become a…
We report the details of construction and testing of a Quantum Twisting Microscope, a recently developed scanning probe instrument that enables twist angle dependent electronic measurements on layered materials. Our implementation is based…
We survey some recent accumulated body of works on hyperfine-mediated transport in a confined one-dimensional channel, realized typically by electrostatic gating. Our review begins with how the spin-polarized edge current can be used as a…
Intense work studying the ballistic regime of electron transport in two dimensional systems based on semiconductors and graphene had been thought to have established most of the key experimental facts of the field. In recent years, however,…
We report on the low temperature measurements of the magnetotransport in Si-doped InAs quantum wire in the presence of a charged tip of an atomic force microscope serving as a mobile gate, i.e. scanning gate microscopy (SGM). By altering…
The continuing miniaturization of microelectronics raises the prospect of nanometre-scale devices with mechanical and electrical properties that are qualitatively different from those at larger dimensions. The investigation of these…
We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…
Here we report on low temperature transport measurements of encapsulated bilayer graphene nano constrictions fabricated employing electrode-free AFM-based local anodic oxidation (LAO) nanolithography. This technique allows for the creation…