We report on the low temperature measurements of the magnetotransport in Si-doped InAs quantum wire in the presence of a charged tip of an atomic force microscope serving as a mobile gate, i.e. scanning gate microscopy (SGM). By altering the carrier concentration with back gate voltage, we transfer the wire through several transport regimes: from residual Coulomb blockade to nonlinear resonance regime, followed by linear resonance regime and, finally, to almost homogeneous diffusion regime. We demonstrate direct relations between patterns measured with scanning gate microscopy and spectra of universal conductance fluctuations. A clear sign of fractal behavior of magnetoconductance dependence is observed for non-linear and linear resonance transport regimes.
@article{arxiv.2305.13983,
title = {Regimes of electronic transport in doped InAs nanowire},
author = {A A Zhukov and I E Batov},
journal= {arXiv preprint arXiv:2305.13983},
year = {2023}
}