Related papers: Sn delta-doping in GaAs
The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been…
High-quality C-doped p-type AlGaAs heterostructures with mobilities exceeding 150 000 cm$^2$/Vs are investigated by low-temperature magnetotransport experiments. We find features of the fractional quantum Hall effect as well as a highly…
Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si…
Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass (SdH) oscillations accompanied by quantized Hall resistances (Rxy) in highly-doped n-type…
We use both Quantum Hall and Shubnikov de Haas experiments at high magnetic field and low temperature to analyse broadening processes of Landau levels in a delta-doped 2D quantum well superlattice and a 1D quantum wire superlattice…
We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de…
We investigate the screening effects of excess electrons in the doped layer on the mobility of a GaAs two-dimensional electron system (2DES) with a modern architecture using short-period superlattice (SL) doping. By controlling the density…
The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport…
The effect of Mg $\delta$-doping on the structural, electrical and optical properties of GaN grown $\textsl{via}$ metalorganic vapor phase epitaxy has been studied using transmission electron microscopy, secondary ion mass spectroscopy,…
We report the observation of Shubnikov-de Haas (SdH) oscillations in coherently strained, low-dislocation AlN/GaN/AlN quantum wells (QWs), including both undoped and $\delta$-doped structures. SdH measurements reveal a single subband…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of…
Indium-doped SnTe has been of interest because the system can exhibit both topological surface states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the…
In GaAs/AlGaAs parabolic quantum wells, subbands are depopulated by a magnetic field in the well plane. A small additional perpendicular field induces Shubnikov-de-Haas (SdH) oscillations which we have used to determine the carrier density,…
We report the low-temperature magneto-transport in the bulk-insulating single crystal of topological insulator Sn doped Bi1.1Sb0.9Te2S. The Shubnikov-de Haas oscillations appear with their reciprocal frequency proportional to cos/theta ,…
The resistivity and Hall effect in CeNiSn are measured at temperatures down to 35 mK and in magnetic fields up to 20 T with the current applied along the {\it b} axis. The resistivity at zero field exhibits quadratic temperature dependence…
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from $\approx5\times10^{18}$cm$^{-3}$ to…
Ru{1-x}Sn{x}Sr2EuCu2O8 and Ru{1-x}Sn{x}Sr2GdCu2O8 have been comprehensively studied by microwave and dc resistivity and magnetoresistivity and by the dc Hall measurements. The magnetic ordering temperature T_m is considerably reduced with…
We report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG…
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…
SnSe monolayer with orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the…