Related papers: Model for nucleation in GaAs homoepitaxy derived f…
Nominally phase-pure $\gamma$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C…
Scanning tunnelling microscopy has been used to study the formation of a Bi monolayer deposited on the five-fold surface of i-Al70Pd21Mn9. Upon deposition of low sub-monolayer coverages, the nucleation of pentagonal clusters of Bi adatoms…
Motivated by recent STM experiments, we present a theoretical study of the electronic and magnetic properties of the Mn-induced acceptor level obtained by substituting a single Ga atom in the (110) surface layer of GaAs or in one of the…
Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of templates and NWs in different phases of the growth reveals…
We report the growth of $\alpha-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $\alpha-Ga_2O_3$…
Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy…
Using scanning tunneling microscopy together with the first-principles density functional theory calculations we study structural properties of the Si(111)5x2-Au surface covered by Ag adatoms. The STM topography data show that a…
We present a joint experimental and theoretical determination of structures of Ag adatoms on the Ge(111) surface using low energy electron diffraction, low energy electron microscopy, scanning tunneling microscopy, and density functional…
Local structure of Mn atoms in Ga1-xMnxN has been investigated by the Mn L3 edge x-ray absorption spectrum (XAS) at total electron yield mode, which preferentially looks at atoms near the surface. A modeling defects configuration, the Mn5…
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron…
The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are…
While diverse fracture characteristics have been observed in liquid metal embrittlement (LME) depending on the solid-liquid metal pairs, the penetration of nanometer-thick liquid metal films along the grain boundary has been identified as…
The electronic structure and magnetism of individual Dy atom adsorbed on the MgO(001) substrate is investigated using the combination of the density functional theory with the Hubbard-I approximation to the Anderson impurity model…
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch…
We study molecular hydrogen formation in and on solids. We construct a model with surface sites and bulk sites capable of describing (1) the motion and exchange of H and H_2 between surface and bulk, (2) the recombination of H and…
The results of DFT GGA calculations on oxygen molecules adsorbed upon the (001) surface of uranium mononitride (UN) are presented and discussed. We demonstrate that O2 molecules oriented parallel to the substrate can dissociate either (i)…
A generalized two-center cluster model (GTCM), including various partitions of the valence nucleons around two alpha-cores, is proposed for studies on the exotic cluster structures of Be isotopes. This model is applied to the 10Be = alpha +…
Using the plane wave pseudopotential method we performed density functional theory calculations on the stability of steps and self-diffusion processes on Ag(100). Our calculated step formation energies show that the {111}-faceted step is…
Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very…
The suitability of molecular statics (MS) simulations to model the structure of 90{\deg} glide set partial dislocation cores in GaAs is analyzed. In the MS simulations the atomic positions are iteratively relaxed by energy minimization, for…