Local structure of Mn atoms in Ga1-xMnxN has been investigated by the Mn L3 edge x-ray absorption spectrum (XAS) at total electron yield mode, which preferentially looks at atoms near the surface. A modeling defects configuration, the Mn5 micro-clusters complexed with substitutional MnGa and interstitial MnI is found for the higher Mn doping concentration. This new configuration is also confirmed by the total energy calculations.
@article{arxiv.0905.4158,
title = {Mn clusterisation in Ga1-xMnxN},
author = {D. Wang and X. Y. Zhang and J. Wang and S. Q. Wei and W. S. Yan and D. W. Boukhvalov},
journal= {arXiv preprint arXiv:0905.4158},
year = {2015}
}
Comments
17 pages, 5 figures, to be published in Solid. State Commun