Related papers: Maximum Metallic Conductivity in Si-MOS Structures
The relaxations of conductivity after a temporary change of carrier density n_s during the waiting time t_w have been studied in a strongly disordered two-dimensional electron system in Si. At low enough n_s < n_g (n_g - the glass…
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree…
We study theoretically the effect of the fermion and boson densities on the superconductivity transition critical temperature $(T_c)$ of a two dimensional electron gas (2DEG), where superconductivity is mediated by a Bose-Einstein…
The electrical properties 2D of packed metallic pentagons have been studied. The characterization of such metallic pentagon heaps (like $i-V$ measurements) has been achieved and has allowed to point out two distinct conduction regimes. They…
We study the effect of the disorder on the metallic behavior of a two-dimensional electron system in silicon. The temperature dependence of conductivity $\sigma (T)$ was measured for different values of substrate bias, which changes both…
We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively…
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…
For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density $n_0$. Analysis of these magnetotransport experiments yields a product $g^*m^*$ that…
We study the electric conductivity of hot QCD matter at various temperatures T within the off-shell parton-hadron-string dynamics transport approach for interacting partonic, hadronic or mixed systems in a finite box with periodic boundary…
Mechanochemically synthesized amorphous 50SISOMO [50AgI-25Ag_2O-25MoO_3] fast ionic conductor shows high ionic conductivity of ~ 6x10^-3 {\Omega}^-1 cm-1 at room temperature. The highest ionic conductivity is achieved for 36 h milled…
We report measurements of the zero-field resistivity in dilute 2D electron system in silicon at temperatures down to 35 mK. This extends the previously explored range of temperatures by almost an order of magnitude. On the metallic side,…
We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…
We calculate the dissipative dc conductivity of a two-dimensional electron system in a magnetic field for the situation when its effective temperature exceeds the temperature of the acoustic phonon system. We demonstrate that at…
We report electrical conductivity $\sigma$ measurements on a range of two-dimensional electron gases (2DEGs) of varying linear extent. Intriguingly, at low temperatures ($T$) and low carrier density ($n_{\mathrm{s}}$) we find the behavior…
For five different electron and hole systems in two dimensions (Si MOSFET's, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, $n_c$ that marks the onset of strong localization is shown to be a single power-law function of the…
AC and DC electrical measurements between 273 and 800 K were used to characterize the electrical conductivity of Al_2 O_3:Mg single crystals containing [Mg]^{0} center. At low fields contacts are blocking. At high fields, electrical current…
High mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low…
We determine the density-dependent electron mass, m*, in two-dimensional (2D) electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHaas measurements. Using very high quality transistors with…
We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of…
The speed of integrated circuits is ultimately limited by the mobility of electrons or holes, which depend on the effective mass in a semiconductor. Here, building on an analogy with electromagnetic metamaterials and transformation optics,…