Related papers: Quantum Hall Effect induced by electron-electron i…
The quantum Hall effect emerges when two-dimensional samples are subjected to strong magnetic fields at low temperatures: Topologically protected edge states cause a quantized Hall conductivity in multiples of $e^2/h$. Here we show that the…
We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers…
We report on the observation of the quantum Hall effect at high temperatures in HgTe quantum wells with a finite band gap and a thickness below and above the critical thickness $d_\textnormal{c}$ that separates a conventional semiconductor…
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…
The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground…
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum…
Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports…
When phonons couple to fermions in 2D semimetals, the interaction may turn the system into an insulator. There are several insulating phases in which the time reversal and the sublattice symmetries are spontaneously broken. Examples are…
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…
In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…
The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the…
We report transport studies on a three dimensional, 70 nm thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semi-metallic HgTe, which thus becomes a three dimensional…
We investigate the effect of electron-electron interaction on the temperature dependence of the Hall coefficient of 2D electron gas at arbitrary relation between the temperature $T$ and the elastic mean-free time $\tau$. At small…
Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the…
A two-dimensional quantum Hall system is studied for a wide class of potentials including single-body random potentials and repulsive electron-electron interactions. We assume that there exists a non-zero excitation gap above the ground…
The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon that manifests as a quantized transverse conductance in response to a longitudinally applied electric field in the absence of an external magnetic field,…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an…
We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates…
We reexamine the charge transport induced by a weak electric field in two-dimensional quantum Hall systems in a finite, periodic box at very low temperatures. The resulting linear response coefficients consist of the time-independent term…