Related papers: Interlayer coupling in ferromagnetic semiconductor…
Motivated by the recent discoveries of ferromagnetic and non-centrosymmetric superconductors, we present a mean-field theory for a superconductor that \textit{both} lacks inversion symmetry and displays ferromagnetism, a scenario which is…
We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below…
We employ a mean-field theory to study ground-state properties and transport of a two-dimensional gas of ultracold alklaline-earth metal atoms governed by the Kondo Lattice Hamiltonian plus a parabolic confining potential. In a homogenous…
We study an effective fermion model on a square lattice to investigate the cooperation and competition of superconductivity and anti-ferromagnetism. In addition to particle tunneling and on-site interaction, a bosonic excitation mediated…
Considering a general situation where a semiconductor is doped by magnetic impurities leading to a carrier-induced ferromagnetic exchange coupling between the impurity moments, we show theoretically the possible generic existence of three…
In the CMR materials, ferromagnetic double exchange (DE) presumably coexists with a direct nearest-neighbour antiferromagnetic interaction. We construct a single-site mean field theory that explicitly takes into account the different nature…
We investigate the influence of the carrier density and other parameters on the interlayer exchange in magnetic thin film systems. The system consists of ferromagnetic and non-magnetic layers where the carriers are allowed to move from…
We compare predictions of the mean-field theory of superconductivity for nearly antiferromagnetic and nearly ferromagnetic metals for cubic and tetragonal lattices. The calculations are based on the parametrization of an effective…
We study the effect of interlayer tunneling in the gauge theory describing a quasi-two-dimensional paramagnetic metal close to a second-order or weakly first-order antiferromagnetic phase boundary. In that theory, two species of fermions…
Starting from microscopic and symmetry considerations, we derive the Hamiltonian describing the exchange interaction between the localized Mn spins and the valence band holes in $Ga_{1-x}Mn_x As$. We find that due to the strong spin-orbit…
The resistivity model as a function of temperature and ionization energy (doping) is derived with further confinements from spin-disorder scattering in ferromagnetic phase. Magnetization and polaronic effects capture the mechanism of both…
A theory of the magnetic field driven (semi-)metal-insulator phase transition is developed for planar systems with a low density of carriers and a linear (i.e., relativistic like) dispersion relation for low energy quasiparticles. The…
We analyze the origin of ferromagnetism as a result of carrier mediation in diluted magnetic oxide semiconductors in the light of the experimental evidence reported in the literature. We propose that a combination of percolation of magnetic…
In a diluted magnetic semiconductor system, the exchange interaction between magnetic impurities has two independent components: a direct antiferromagnetic interaction and a ferromagnetic interaction mediated by charge carriers. Depending…
We calculate Curie temperatures and study the stability of ferromagnetism in diluted magnetic materials, taking as a model for the exchange between magnetic impurities a damped Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction and a shor t…
A density functional theory of ferromagnetism in heterostructures of compound semiconductors doped with magnetic impurities is presented. The variable functions in the density functional theory are the charge and spin densities of the…
We consider quasi-two-dimensional gas of electrons in a typical Si-MOSFET, assuming repulsive contact interaction between electrons. Magnetisation and susceptibility are evaluated within the mean-field approach. Finite thickness of the…
Transition metal oxides are well known for their complex magnetic and electrical properties. When brought together in heterostructure geometries, they show particular promise for spintronics and colossal magnetoresistance applications. In…
Carrier induced ferromagnetism in diluted III-V semi-conductor is analyzed within a two step approach. First, within a single site CPA formalism, we calculate the element resolved averaged Green's function of the itinerant carrier. Then…
We propose that localized defects in magnetic semiconductors act as deep impurities and can be described by the Anderson model. Within this model, hybridization of d-orbitals and p-orbitals gives rise to a non-RKKY indirect exchange…