Related papers: 3e tunneling processes in a superconducting single…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
We investigate Andreev transport through a quantum dot attached to two external ferromagnetic leads and one superconducting electrode. The transport properties of the system are studied by means of the real-time diagrammatic technique in…
We theoretically study the tunnelling current of a single electron transistor (SET) under optical pumping. It found that holes in the quantum dot(QD) created by optical pumping lead to new channels for the electrons tunnelling from emitter…
In this Letter, we present a theoretical analysis to single-electron pumping operation in a large range of driving frequencies through the time-dependent tunneling barriers controlled by external gate voltages. We show that the…
Experiments on one-dimensional small capacitance Josephson Junction arrays are described. The arrays have a junction capacitance that is much larger than the stray capacitance of the electrodes, which we argue is important for observation…
We have calculated the linear conductance associated with tunneling of individual quasiparticles of primary quantum Hall liquids with filling factors $\nu =1/(2m+1)$ through a system of two antidots in series. On-site Coulomb interaction…
We report on the observation of Kondo and split Kondo peaks in single-molecule transistors containing a single spin transition molecule with a Fe2+ ion. Coulomb blockade characteristics reveal a double quantum dot behavior in a parallel…
We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify…
We develope a model to describe the transmission coefficient and tunneling current in the presence of photon-electron coupling in a resonant diode. Our model takes into account multiphoton processes as well as the transitions between…
We present finite bias transport measurements on a few-electron quantum dot. In the Coulomb blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the non-blockaded…
We describe electron transport through small metallic grains with Coulomb blockade effects beyond the perturbative regime. For this purpose we study the real-time evolution of the reduced density matrix of the system. In the first part of…
Electronic transport through a two-path triple-quantum-dot system with two source leads and one drain is studied. By separating the conductance of the two double dot paths, we are able to observe double dot and triple dot physics in…
Inelastic tunneling of electrons can generate the emission of photons with energies intuitively limited by the applied bias voltage. However, experiments indicate that more complex processes involving the interaction of electrons with…
Single-electron transistors embedded in a suspended nanobeam or carbon nanotube may exhibit effects originating from the coupling of the electronic degrees of freedom to the mechanical oscillations of the suspended structure. Here, we…
We have studied the problem of coherent and sequential tunneling through a double barrier structure, assisted by light considered to be present All over the structure, i,e emitter, well and collector as in the experimental evidence. By…
In a two-level system, constituted by two serially coupled single level quantum dots, coupled to external leads we find that the current is suppressed in one direction of biasing caused by a fully occupied two-electron triplet state in the…
Tunneling is one of the most bizarre phenomena in quantum mechanics. An attempt to understand it led to the next natural question of how long does a particle need to tunnel a barrier. The latter gave rise to several definitions such as the…
Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via…
The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of…
We propose a selfconsistent microscopic model of vertical sequential tunneling through a multi-quantum well.The model includes a detailed description of the contacts,uses the Transfer Hamiltonian for expressions of the current and it treats…