Microscopic Model for Sequential Tunneling in Semiconductor Multiple Quantum Wells
Condensed Matter
2009-10-30 v1
Abstract
We propose a selfconsistent microscopic model of vertical sequential tunneling through a multi-quantum well.The model includes a detailed description of the contacts,uses the Transfer Hamiltonian for expressions of the current and it treats the Coulomb interaction within a mean field approximation. We analyze the current density through a double well and a superlattice and study the formation of electric field domains and multistability coming from the Coulomb interaction. Phase diagrams of parameter regions (bias, doping in the heterostructure and in the contacts,etc) where the different solutions exist are given.
Cite
@article{arxiv.cond-mat/9703131,
title = {Microscopic Model for Sequential Tunneling in Semiconductor Multiple Quantum Wells},
author = {Ramon Aguado and Gloria Platero and Miguel Moscoso and Luis L. Bonilla},
journal= {arXiv preprint arXiv:cond-mat/9703131},
year = {2009}
}
Comments
4 pages, 8 Postscript Figures