Related papers: Strong Tunneling in the Single-Electron Box
In a recent Letter by the authors [I.S. Burmistrov and A.M.M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single electron transistor or SET) display "macroscopic charge quantization" which is…
Based on the Ambegaokar-Eckern-Schon approach to the Coulomb blockade we develop a complete quantum theory of the single electron transistor. We identify a previously unrecognized physical observable q^\prime in the problem that, unlike the…
Electron tunneling through small metallic islands with low capacitance is studied. The large charging energy in these systems is responsible for nonperturbative Coulomb blockade effects. We further consider the effect of electron…
We theoretically investigate charge transport through serial double quantum dots (SDQDs) with strong electron correlations using nonequilibrium Green's function techniques. In the linear response regime, we compute the charge stability…
We have numerically studied the behavior of one dimensional tunnel junction arrays when random background charges are included using the ``orthodox'' theory of single electron tunneling. Random background charge distributions are verified…
In this paper I study the posibility of inducing a single-electron current by rotating a non-magnetic conducting rod with a small tunnel junction immerse in a uniform magnetic field perpendicular to the plane of motion. I show first, by…
We report measurements of charge configurations and charge transfer dynamics in a hybrid single-electron box composed of aluminum and copper. We used two single-electron transistors (SETs) to simultaneously read out different parts of the…
We theoretically investigate quantum fluctuation of charge between even and odd states of a normal-superconducting-normal single-electron tunneling transistor. It is shown that due to the superconducting gap, the charge fluctuation in the…
We have extended Monte Carlo simulations of hopping transport in completely disordered 2D conductors to the process of external charge relaxation. In this situation, a conductor of area $L \times W$ shunts an external capacitor $C$ with…
Renormalization group methods are used to study the low-energy behavior of the unscreened Coulomb interaction in a one-dimensional electron system. By applying a GW approximation, a strong wavefunction renormalization is found in the model,…
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…
In this paper we show an approach to electron transport in double barrier structures which unifies the well known sequential and resonant tunneling models in the widest range of transport regimes, from completely coherent to completely…
We study the electron transport through a system of two low-capacitance metal islands connected in series between two electrodes. The work is motivated in part by experiments on semiconducting double-dots, which show intriguing effects…
The conductance through a serial double dot structure for which the inter-dot tunneling is stronger than the tunneling to the leads is studied using the numerical density matrix renormalization group method and analytic arguments. When the…
We report low-temperature transport experiments on single-wall nanotubes with metallic leads of varying contact quality, ranging from weak tunneling to almost perfect transmission. In the weak tunneling regime, where Coulomb blockade…
This paper proposes a universal microscopic model for the shallow confinement regime of single-electron tunneling devices. We consider particle escape from a quantum well generically emerging as a bifurcation in a smooth electrostatic…
We theoretically investigate effects of quantum fluctuation between even and odd charge states on the transport properties of a normal-superconducting-normal single-electron tunneling transistor. The charge fluctuation is discussed beyond…
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…
The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to…
We present a theory of Coulomb blockade oscillations in tunneling through a pair of quantum dots connected by a tunable tunneling junction. The positions and amplitudes of peaks in the linear conductance are directly related, respectively,…