Related papers: Gain Dependence of the Noise in the Single Electro…
We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of…
We theoretically investigate the noise of a single-electron transistor in the regime of large quantum fluctuation of charge out of equilibrium. We show that the charge noise is suppressed due to the charge renormalization caused by the…
We report on measurements of low frequency noise in a single electron transistor from a few Hz up to 10 MHz. Measurements were done for different bias and gate voltages, which allows us to separate noise contributions from different noise…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which…
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…
We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point…
The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the charge noise and the contact area of the transistor island…
A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias…
The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…
Studies about the constructive aspects of noise and fluctuations in different non-linear systems have shown that the addition of external noise to systems with an intrinsic noise may result in a less noisy response. Recently, the…
We have used Ramsey tomography to characterize charge noise in a weakly charge-sensitive superconducting qubit. We find a charge noise that scales with frequency as $1/f^\alpha$ over 5 decades with $\alpha = 1.93$ and a magnitude…
Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise…
Single electron transistors (SETs) are very sensitive electrometers and they can be used in a range of applications. In this paper we give an introduction to the SET and present a full quantum mechanical calculation of how noise is…
We investigate the noise properties of a superconducting single electron transistor (SSET) coupled to an harmonically driven resonator. Using a Langevin equation approach, we calculate the frequency spectrum of the SSET charge and calculate…
We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by…
We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer…
We report on long-term measurements of a highly coherent, non-tunable superconducting transmon qubit, revealing low-frequency burst noise in coherence times and qubit transition frequency. We achieve this through a simultaneous measurement…