English
Related papers

Related papers: The Amorphous-Crystal Interface in Silicon: a Tigh…

200 papers

So far the problem of interface behavior upon phase transition has not yet acquired a satisfactory mathematical formulation due to a variety of the physical phenomena involved. Analytical solutions exist only for elementary problems…

Statistical Mechanics · Physics 2011-08-12 Alex Guskov

Silicon dioxide and silicon (SiO$_{2}$/Si) interface plays a very important role in semiconductor industry. However, at nanoscale, its interfacial thermal properties haven't been well understood so far. In this paper, we systematically…

Materials Science · Physics 2015-06-11 Jie Chen , Gang Zhang , Baowen Li

Friction dissipates a substantial portion of global energy, motivating the pursuit of superlubricity, a state of near-zero friction, in real-world systems. Conventional approaches rely on crystalline lattice mismatch to suppress periodic…

Materials Science · Physics 2026-03-17 Wan Wang , Zijun Ding , Panpan Li , Wanying Ying , Hongxuan Li , Xiaohong Liu , Huidi Zhou , Jianmin Chen , Wengen Ouyang , Li Ji

Using molecular dynamics simulations we study the thermodynamic behavior of a single-component covalent material described by the recently proposed Environment-Dependent Interatomic Potential (EDIP). The parameterization of EDIP for silicon…

Materials Science · Physics 2009-11-07 P. Keblinski , M. Z. Bazant , R. K. Dash , M. M. Treacy

Phonon transmission across an interface between dissimilar crystalline solids is calculated using molecular dynamics simulations with interatomic force constants obtained from first principles. The results reveal that although inelastic…

Computational Physics · Physics 2015-06-09 Takuru Murakami , Takuma Hori , Takuma Shiga , Junichiro Shiomi

Interfaces such as grain boundaries in polycrystalline as well as heterointerfaces in multiphase solids are ubiquitous in materials science and engineering. Far from being featureless dividing surfaces between neighboring crystals,…

Materials Science · Physics 2024-01-23 Aurélien Vattré

We present a coupled atomistic-continuum method for the modeling of defects and interface dynamics of crystalline materials. The method uses atomistic models such as molecular dynamics near defects and interfaces, and continuum models away…

Materials Science · Physics 2009-11-07 Weinan E , Zhongyi Huang

The multidimensional topography of the collective potential energy function of a so-called strong glass former (silica) is analyzed by means of classical molecular dynamics calculations. Features qualitatively similar to those of fragile…

Disordered Systems and Neural Networks · Physics 2009-10-31 Philippe Jund , Remi Jullien

The phase-field-crystal model is used to access the structure and thermodynamics of interfaces between two coexisting liquid crystalline phases in two spatial dimensions. Depending on the model parameters there is a variety of possible…

Soft Condensed Matter · Physics 2014-01-28 Simon Praetorius , Axel Voigt , Raphael Wittkowski , Hartmut Löwen

We consider the equilibrium statistical properties of interfaces submitted to competing interactions; a long-range repulsive Coulomb interaction inherent to the charged interface and a short-range, anisotropic, attractive one due to either…

Statistical Mechanics · Physics 2009-11-07 Sofian Teber

Topological crystalline insulators are phases of matter where the crystalline symmetries solely protect the topology. In this work, we explore the effect of many-body interactions in a subclass of topological crystalline insulators, namely…

Strongly Correlated Electrons · Physics 2023-05-25 Devendra Singh Bhakuni , Amrita Ghosh , Eytan Grosfeld

Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not to…

Materials Science · Physics 2015-05-28 R. Colby , M. L. Bolen , M. A. Capano , E. A. Stach

A rough interface seems to be one of the possible reasons for low channel mobility (conductivity) in SiC MOSFETs. To evaluate the mobility by interface roughness, we drew a boundary line between amorphous insulator and crystalline 4H-SiC in…

Materials Science · Physics 2021-01-08 Hironori Yoshioka , Tomonori Honda

The $\alpha/\beta$ interface is central to the microstructure and mechanical properties of titanium alloys. We investigate the structure, thermodynamics and migration of the coherent and semicoherent Ti $\alpha/\beta$ interfaces as a…

Materials Science · Physics 2023-12-11 Siqi Wang , Tongqi Wen , Jian Han , David J. Srolovitz

Solid-phase epitaxial crystallization of amorphous Si layers on a crystalline Si substrate during B-ion irradiation is investigated over the temperature range 293 - 573 K. Regrowth occurs at all measured temperatures, with activation energy…

Materials Science · Physics 2015-12-03 N. E. B. Cowern , B. J. Pawlak , R. Gwilliam

An overview on recent developments in thermal interfaces is given with a focus on a novel thermal interface technology that allows the formation of 2-3 times thinner bondlines with strongly improved thermal properties at lower assembly…

General Physics · Physics 2008-01-08 R. Linderman , T. Brunschwiler , B. Smith , B. Michel

We study the dynamical behavior of a one dimensional interface interacting with a sticky unpenetrable substrate or wall. The interface is subject to two effects going in opposite directions. Contact between the interface and the substrate…

Probability · Mathematics 2020-07-20 Hubert Lacoin , Shangjie Yang

Several model fluids in contact with planar, spherical, and cylindrical walls are investigated for small number densities within density functional theory. The dependence of the solid-fluid interfacial tension on the curvature of spherical…

Statistical Mechanics · Physics 2015-05-05 Andreas Reindl , Markus Bier , S. Dietrich

In this paper we discuss the application of current it ab initio computer simulation techniques to hydrogenated amorphous silicon (a-Si:H). We begin by discussing thermal fluctuation in the number of coordination defects in the material,…

Materials Science · Physics 2009-11-13 D. A. Drabold , T. A. Abtew , F. Inam , Y. Pan

We report a study on the interface between polar high-k materials and the Si(001)-(2X1) reconstructed surface with LaAlO3 taken as a prototype material. The construction of the interface is based on the prior growth of metal lines followed…

Materials Science · Physics 2015-06-25 Isabelle Devos , Pierre Boulenc
‹ Prev 1 3 4 5 6 7 10 Next ›