Related papers: Kondo Effect in Single Quantum Dot Systems --- Stu…
Scaling laws and universality play an important role in our understanding of critical phenomena and the Kondo effect. Here we present measurements of non-equilibrium transport through a single-channel Kondo quantum dot at low temperature…
We study thermal conductance and thermopower of a metallic single-electron transistor beyond the limit of weak tunnel coupling. Employing both a systematic second-order perturbation expansion and a non-perturbative approximation scheme, we…
We have studied the temperature dependent thermopower of gate-defined, lateral quantum dots in the Coulomb blockade regime using an electron heating technique. The line shape of the thermopower oscillations depends strongly on the…
We investigate theoretically the transport properties of the side-coupled double quantum dots in connection with the experimental study of Sasaki {\it et al.} Phys.Rev.Lett.{\bf 103}, 266806 (2009). The novelty of the set-up consists in…
We revisited the scaling behavior of the transport properties of a quantum dot system described by the spin-1/2 Anderson model using analytical methods. In the low temperature limit we show that the conductance has a universal behavior with…
Electron tunneling through quantum-dots side coupled to a quantum wire, in equilibrium and nonequilibrium Kondo regime, is studied. The mean-field finite-$U$ slave-boson formalism is used to obtain the solution of the problem. We have found…
We investigate cross-correlations in the tunneling currents through two parallel quantum dots coupled to independent electrodes and gates and interacting via an inter-dot Coulomb interaction. The correlations reveal additional information,…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
We consider a `quantum dot' in the Coulomb blockade regime, subject to an arbitrarily large source-drain voltage V. When V is small, quantum dots with odd electron occupation display the Kondo effect, giving rise to enhanced conductance.…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
We consider a quantum dot coupled to two BCS superconductors with same gap energies $\Delta$. The transport properties are investigated by means of infinite-$U$ noncrossing approximation. In equilibrium density of states, Kondo effect shows…
The effect of a magnetic field on the equilibrium spectral and transport properties of a single-molecule junction is studied using the numerical renormalization group method. The molecule is described by the Anderson-Holstein model in which…
We report manipulation of a Kondo resonance originated from the spin-electron interactions between a two-dimensional molecular assembly of TBrPP-Co molecules and a Cu(111) surface at 4.6 K using a low temperature scanning tunneling…
The Kondo effect is theoretically studied in a quantum dot embedded in a mesoscopic ring. The ring is connected to two external leads, which enables the transport measurement. Using the "poor man's" scaling method, we obtain analytical…
We study the electric and thermoelectric transport properties of correlated quantum dots coupled to two ferromagnetic leads and one superconducting electrode. Transport through such hybrid devices depends on the interplay of…
We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a…
The zero-bias anomaly at low temperatures, originated by the Kondo effect when an electric current flows through a system formed by a spin-$1/2$ quantum dot and two metallic contacts is theoretically investigated. In particular, we compare…
The temperature dependence of the I-V characteristics of many single-electron tunneling devices enable thermometer operation of these systems. We investigate two normal conducting kinds of them, {\sl (a)} a single junction in a…
The linear conductance of a tunnel junction in series with an ohmic resistor is determined in the high temperature limit. The tunneling current is treated nonperturbatively by means of path integral techniques. Due to quantum effects the…
The role of non-equilibrium effects in the conductance through quantum dots is investigated. Associated with single-electron tunneling are shake-up processes and the formation of excitonic-like resonances. They change qualitatively the low…