Related papers: Observation of Quantum Fluctuations of Charge on a…

We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…

We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which…

We consider charge fluctuations in a quantum dot coupled to an interacting one-dimensional electron liquid. We find the behavior of this system to be similar to the multichannel pseudogap Kondo model. By tuning the coupling between the dot…

A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…

We calculate the counting statistics of electron transfer through an open quantum dot with charging interaction. A dot that is connected to leads by two single-channel quantum point contacts in an in-plane magnetic field is described by a…

We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By…

We consider a quantum dot system whose charge fluctuations are monitored by a quantum point contact allowing for the detection of both charge and transferred heat statistics. Our system consists of two nearby conductors that exchange energy…

We performed measurements on a quantum dot and a capacitively coupled quantum point contact by using the sharp metallic tip of a low-temperature scanning force microscope as a scanned gate. The quantum point contact served as a detector for…

The charging energy of a quantum dot is measured through the effect of its potential on the conductance of a second dot. This technique allows a measurement of the scaling of the dot's charging energy with the conductance of the tunnel…

As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…

We study the Coulomb blockade in a chaotic quantum dot connected to a lead by a single channel at nearly perfect transmission. We take into account quantum fluctuations of the dot charge and a finite level spacing for electron states within…

Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were…

Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated…

We study mesoscopic fluctuations of the differential capacitance of a dot connected to a lead by a single-mode quantum channel with adjustable conductance G. We show that the amplitude of the fluctuations reaches maximum at a partially…

We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a…

We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of…

We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. This permits…

We describe two experiments to study the influence of fluctuations in the electron charge on the transport properties of a quantum dot. First, we scan a device from single- to double quantum-dot behavior by varying the conductance of a…

We use a novel technique to experimentally explore transport properties through a single metallic nanoparticle with variable coupling to electric leads. For strong dot-lead coupling the conductance is an oscillatory function of the gate…