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$RE$NiO$_3$ is a negative charge transfer energy system and exhibits a temperature-driven metal-insulator transition (MIT), which is also accompanied by a bond disproportionation (BD) transition. In order to explore how hole doping affects…

This work explores the unique character of strongly correlated systems, specifically Mott-insulators, in the context of battery electrode materials. The study investigates the correlation between the proposed chemical potential evolution…

We apply ultrafast spectroscopy to establish a time-domain hierarchy between structural and electronic effects in a strongly-correlated electron system. We discuss the case of the model system VO2, a prototypical non-magnetic compound that…

Strongly Correlated Electrons · Physics 2007-05-23 A. Cavalleri , Th. Dekorsy , H. H. Chong , J. C. Kieffer , R. W. Schoenlein

Doping the distorted-perovskite Mott insulators LaTiO$_3$ and GdTiO$_3$ with a single SrO layer along the [001] direction gives rise to a rich correlated electronic structure. A realistic superlattice study by means of the charge…

Materials Science · Physics 2015-05-08 Frank Lechermann , Michael Obermeyer

At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed…

A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important…

Strongly Correlated Electrons · Physics 2019-05-14 Yoshitaka Kawasugi , Kazuhiro Seki , Satoshi Tajima , Jiang Pu , Taishi Takenobu , Seiji Yunoki , Hiroshi M. Yamamoto , Reizo Kato

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

Strongly Correlated Electrons · Physics 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V$_2$O$_3$. We find a microscopic domain formation that is clearly…

Strongly Correlated Electrons · Physics 2016-01-20 G. Lantz , M. Hajlaoui , E. Papalazarou , V. L. R. Jacques , A. Mazzotti , M. Marsi , S. Lupi , M. Amati , L. Gregoratti , L. Si , Z. Zhong , K. Held

Introducing partial sum rules for the optical multiplet transitions, we outline a unified approach to magnetic and optical properties of strongly correlated transition metal oxides. On the example of LaVO$_3$ we demonstrate how the…

Strongly Correlated Electrons · Physics 2007-05-23 Giniyat Khaliullin , Peter Horsch , Andrzej M. Oles

Describing the doped Fullerenes using a generalized Hubbard model, we study the Mott transition for different integer fillings of the t_1u band. We use the opening of the energy-gap E_g as a criterion for the transition. E_g is calculated…

Strongly Correlated Electrons · Physics 2009-10-31 Erik Koch , Olle Gunnarsson , Richard M. Martin

The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5% and 15%. A change in resistivity…

Strongly Correlated Electrons · Physics 2024-05-15 Johannes Mohr , Tyler Hennen , Daniel Bedau , Rainer Waser , Dirk J. Wouters

The doping and temperature dependent conductivity of electron-doped cuprates is analysed. The variation of kinetic energy with doping is shown to imply that the materials are approximately as strongly correlated as the hole-doped materials.…

Strongly Correlated Electrons · Physics 2015-01-09 A. J. Millis , A. Zimmers , R. P. S. M. Lobo , N. Bontemps

We investigate experimentally and theoretically the dynamical properties of a Mott insulator in decoupled one-dimensional chains. Using a theoretical analysis of the Bragg excitation scheme we show that the spectrum of inter-band…

The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on Bi$_{2-x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete evolution of the bulk band…

We develop here a general formalism for multi-orbital Mott systems which can be used to understand dynamical and static spectral weight transfer. We find that the spectral weight transferred from the high energy scales is greatly increased…

Strongly Correlated Electrons · Physics 2011-09-08 Wei-Cheng Lee , Philip W. Phillips

In cuprates, the strong correlations in proximity to the antiferromagnetic Mott insulating state give rise to an array of unconventional phenomena beyond high temperature superconductivity. Developing a complete description of the ground…

We investigate the evolution of quantal spectra and the corresponding wave functions along the [O(6)-U(5)]$\supset$O(5) transition of the interacting boson model. The model is integrable in this regime and its ground state passes through a…

Nuclear Theory · Physics 2009-11-11 Stefan Heinze , Pavel Cejnar , Jan Jolie , Michal Macek

The recent scanning tunnelling results of Alldredge et al on Bi-2212 and of Hanaguri et al on Na-CCOC are examined from the perspective of the BCS/BEC boson-fermion resonant crossover model for the mixed-valent HTSC cuprates. The model…

Superconductivity · Physics 2009-11-13 John A. Wilson

We investigated the infrared optical spectra of an organic dimer Mott insulator $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, which was irradiated with X-rays. We observed that the irradiation caused a large spectral weight transfer from the…

Strongly Correlated Electrons · Physics 2009-11-13 T. Sasaki , N. Yoneyama , Y. Nakamura , N. Kobayashi , Y. Ikemoto , T. Moriwaki , H. Kimura

We investigate the electrostatic effects in doped topological insulators by developing a self consistent scheme for an interacting tight binding model. The presence of bulk carriers, in addition to surface electrons, generates an intrinsic…

Materials Science · Physics 2013-05-30 Dimitrios Galanakis , Tudor D. Stanescu