Related papers: Evolution of spectral function in a doped Mott ins…
I survey theoretical advances in our understanding of the quantum phases and phase transitions of Mott insulators, and of allied conducting systems obtained by doping charge carriers. A number of new experimental examples of Mott insulators…
Employing Nernst-Einstein decomposition $\sigma=e^2\chi_c D$ of the conductivity $\sigma$ onto charge susceptibility (compressibility) $\chi_c$ and diffusion constant $D$, we argue that the bad-metallic behavior of $\sigma$ in the regime of…
In this paper we describe a four dimensional family of special rational elliptic surfaces admitting an involution with isolated fixed points. For each surface in this family we calculate explicitly the action of a spectral version of the…
We study the dynamics of phase transitions in the one dimensional Bose-Hubbard model. To drive the system from Mott insulator to superfluid phase, we change the tunneling frequency at a finite rate. We investigate the build up of…
We present a detailed analysis of the dynamical response of ultra-cold bosonic atoms in a one-dimensional optical lattice subjected to a periodic modulation of the lattice depth. Following the experimental realization by Stoferle et al…
It is widely believed that high-temperature superconductivity in the cuprates emerges from doped Mott insulators. The physics of the parent state seems deceivingly simple: The hopping of the electrons from site to site is prohibited because…
We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the $R_{1-x}$Ca$_x$VO$_3$ perovskites,…
While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…
Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped…
We study the motion of a hole with internal degrees of freedom, introduced to the zigzag magnetic ground state of Na$_2$IrO$_3$, by using the self-consistent Born approximation. We find that the low, intermediate, and high-energy spectra…
In the paper, PRB {\bf 77}, 085118 (2008), the authors conclude that the observation of Ti-doping induced half-metallicity in SrRu$_{1-x}$TI$_x$O$_3$ within the limit of local density approximations is not valid as the experimental results…
Spectral properties of the Bose-Hubbard model and a recently proposed coupled-cavity model are studied by means of quantum Monte Carlo simulations in one dimension. Both models exhibit a quantum phase transition from a Mott insulator to a…
We study the doping evolution of the electronic structure in the pseudogap state of high-Tc cuprate superconductors, by means of a cluster extension of the dynamical mean-field theory applied to the two-dimensional Hubbard model. The…
This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS$_2$. When heating the sample, the surface displays an intermediate insulating phase that persists for $\sim 10$ K on top…
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…
In this study, we employ bulk electronic properties characterization and x-ray scattering/spectroscopy techniques to map the structural, magnetic and electronic properties of (Eu$_{1-x}$Ca$_{x}$)$_{2}$Ir$_{2}$O$_{7}$ as a function of…
By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3.…
We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is…
Conventional models of planar and bulk heterojunction organic solar cells have been extended by introducing doping in the active layer. We have studied the performance of organic solar cells as a function of dopant concentration. For bulk…
The rule relating the observed Hall coefficient to the spin and charge responses of the uniform doped Mott insulator is derived. It is essential to include the contribution of holon and spinon three-current correlations to the effective…