Related papers: Cotunneling and renormalization effects for the si…
We investigate thermally-driven transport of heat and charge in a superconducting single-electron transistor by means of a real-time diagrammatic transport theory. Our theoretical approach allows us to account for strong Coulomb…
We study the electronic thermal drag in two different Coulomb-coupled systems, the first one composed of two Coulomb blockaded metallic islands and the second one consisting of two parallel quantum wires. The two conductors of each system…
We report measurements on single-electron pumps, consisting of two metallic islands formed by three tunnel junctions in series. We focus on the linear-response conductance as a function of gate voltage and temperature of three samples with…
An electron transport is studied in the system which consists of scanning tunneling microscopy-single molecule magnet-metal. Due to quantum tunneling of magnetization in single-molecule magnet, linear response conductance exhibits stepwise…
We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons.
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
We review our recent studies on the Kondo effect in the tunneling phenomena through quantum dot systems. Numerical methods to calculate reliable tunneling conductance are developed. In the first place, a case in which electrons of odd…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
We consider electron transport through a quantum dot described by the Kondo model in the regime of large transport voltage V in the presence of a magnetic field B with max(V,B) >> T_K. The electric current I and the local magnetization M…
Conductance measurements of a molecular wire, contacted between an epitaxial molecule-metal bond and the tip of a scanning tunneling microscope, are reported. Controlled retraction of the tip gradually de-hybridizes the molecule from the…
We derive self-consistent expressions of current and noise for single-electron transistors driven by time-dependent perturbations. We take into account effects of the electrical environment, higher-order co-tunneling, and time-dependent…
A new nano-lithography technique compatible with conducting oxide interfaces, which requires a single lithographic step with no additional amorphous layer deposition or etching, is presented. It is demonstrated on SrTiO3/LaAlO3 interface…
We generalize the fermionic renormalization group method to describe analytically transport through a double barrier structure in a one-dimensional system. Focusing on the case of weakly interacting electrons, we investigate thoroughly the…
The charge localization of single electrons on mesoscopic metallic islands leads to a suppression of the electrical current, known as the Coulomb blockade. When this correction is small, it enables primary electron thermometry, as it was…
We present finite bias transport measurements on a few-electron quantum dot. In the Coulomb blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the non-blockaded…
Thermodynamic properties of the one-dimensional Kondo lattice model at half-filling are studied by the density matrix renormalization group method applied to the quantum transfer matrix. Spin susceptibility, charge susceptibility, and…
We present a comprehensive investigation of nonequilibrium effects and self heating in single electron transfer devices based primarily on the Coulomb blockade effect. During an electron trapping process, a hot electron may be deposited in…
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…
Single electron tunneling into small superconducting islands is sensitive to the gap energy of the excitations created in the process and, hence, depends on the electron number parity. At low temperature the properties of the system are…
Scaling laws and universality are often associated with systems exhibiting emergent phenomena possessing a characteristic energy scale. We report nonequilibrium transport measurements on two different types of single-molecule transistor…