Related papers: Electronic transport and the localization length i…
We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the…
The low-temperature Hall resistivity \rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects,…
We reconsider the theory of Hall effect in the systems with hopping conduction. The purpose of the present study is to compare the percolation approach based on the optimal triad model with numerical simulations and recent experimental…
The spinless Falicov-Kimball model exhibits outside the particle-hole symmetric point different stable nonhomogeneous charge orderings. These include the well known charge stripes and a variety of orderings with phase separated domains,…
Hall viscosity is a non-dissipative response function describing momentum transport in two-dimensional systems with broken parity. It is quantized in the quantum Hall regime, and contains information about the topological order of the…
The electromagnetic characteristics of double-layer quantum Hall systems are studied, with projection to the lowest Landau level taken into account and intra-Landau-level collective excitations treated in the single-mode approximation. It…
The present study examines the electronic transport characteristics of amorphous semiconductors through TOF measurements and numerical simulations. The primary objective is to determine the DOS in amorphous selenium (a-Se) and to assess the…
The absorption coefficient for surface acoustic waves in a piezoelectric insulator in contact with a GaAs/AlGaAs heterostructure (with two-dimensional electron mobility $\mu= 1.3\times 10^5 cm^2/V\cdot s)$ at T=4.2K) via a small gap has…
The crossover from the semiclassical transport to quantum Hall effect is studied by examining a two-dimensional electron system in an AlGaAs/GaAs heterostructure. By probing the magneto-oscillations, it is shown that the semiclassical…
Transport in disordered systems often occurs via the variable range hopping (VRH) in the dilute carrier density limit, where electrons hop between randomly distributed localized levels. We study the nonequilibrium transport by a uniform DC…
We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…
We investigate quantum transport in an off-diagonal Aubry--Andr\'e--Harper chain. The periodic hopping modulation generates effective internal boundaries that strongly influence the transmission characteristics. We show that edge, in-band…
We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental…
We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN…
For the fractional quantum Hall states on a finite disc, we study the thermoelectric transport properties under the influence of an edge and its reconstruction. In a recent study on a torus [Phys. Rev. B 101, 241101 (2020)], Sheng and Fu…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…
Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate…
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range 7-17 nm. The devices were fabricated on silicon-on-insulator wafers utilizing wafer bonding,…
We study the transport properties of a long non-uniform quantum wire where the electron-electron interactions and the density vary smoothly at large length scales. We show that these inhomogeneities lead to a finite resistivity of the wire,…
The frequency dependent transport is investigated for a two-dimensional disordered system under QHE conditions. The real and imaginary parts of the conductivity are calculated numerically in linear response using a recursive Green function…