Related papers: Generalized Variable Range Hopping Near Two-Dimens…
We report a theoretical investigation on conductance fluctuation of mesoscopic systems. Extensive numerical simulations on quasi-one dimensional, two dimensional, and quantum dot systems with different symmetries (COE, CUE, and CSE)…
The mutual influence of two layers with strongly loclized electrons is exercised through the random Coulomb shifts of site energies in one layer caused by electron hops in the other layer. We trace how these shifts give rise to a voltage…
We analyze the effects of the local Coulomb interaction on a topological band insulator (TBI) by applying the dynamical mean field theory to a generalized Bernevig-Hughes-Zhang model having electron correlations. It is elucidated how the…
We report the application of the density-matrix renormalization group method to a spatially anisotropic two-dimensional Hubbard model at half-filling. We find a deconfinement transition induced by the transverse hopping parameter $t_y$ from…
In this paper, we explore the localization transition and the scaling properties of both quasi-one-dimensional and two-dimensional quasiperiodic systems, which are constituted from coupling several Aubry-Andr\'{e} (AA) chains along the…
We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson…
We have studied the AC response of a hopping model in the variable range hopping regime by dynamical Monte Carlo simulations. We find that the conductivity as function of frequency follows a universal scaling law. We also compare the…
Mott transitions are studied in the two-dimensional Hubbard model by a non-perturbative theory of correlator projection that systematically includes spatial correlations into the dynamical mean-field approximation. Introducing a nonzero…
For a system of localised electron states the DC conductivity vanishes at zero temperature, but localised electrons can conduct at finite temperature. Mott gave a theory for the low-temperature conductivity in terms of a variable-range…
We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…
We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…
We establish the quantum fluctuations $\Delta Q_B^2$ of the charge $Q_B$ accumulated at the boundary of an insulator as an integral tool to characterize phase transitions where a direct gap closes (and reopens), typically occurring for…
Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…
In low temperature supercooled liquid, below the ideal mode coupling theory transition temperature, hopping and continuous diffusion are seen to coexist. We present a theory which incorporates interaction between the two processes and shows…
We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…
In the framework of the trap-size scaling theory, we study the scaling properties of the Bose-Hubbard model in two dimensions in the presence of a trapping potential at finite temperature. In particular, we provide results for the particle…
A generalization of the single-parameter scaling theory of localization is proposed for the case when the random potential depends on temperature. The scaling equation describing the behavior of the resistance is derived. It is shown that…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
We discuss the recently discovered two-dimensional metal-insulator transition in zero magnetic field in the light of the scaling theory of localization. We demonstrate that the observed symmetry relating conductivity and resistivity follows…
Spectral properties of the two-dimensional Hubbard model near the Mott transition are investigated by using cluster perturbation theory. The Mott transition is characterized by freezing of the charge degrees of freedom in a single-particle…