Related papers: Valley Phase Transition in Si MOSFETs
The phase diagram of SO(3) lattice gauge theory is investigated by Monte Carlo techniques on both symmetric and asymmetric lattices with a view (i) to understanding the relationship between the bulk transition and the deconfinement…
We argue on the basis of experimental numbers that the B=0 metal-insulator transition in two dimensions, observed in Si-MOSFETs and in other two-dimensional systems, is likely to be due to a few strongly interacting electrons, which also…
Path Integral Quantum Monte Carlo simulation is used to study thermodynamic properties and a phase diagram of 2D quantum Josephson array, described by 2+1 XY model. The helicity and vorticity moduli, correlation function of phases and other…
We study the zero-temperature phase transitions of two-dimensional superconducting arrays with both the self- and the junction capacitances in the presence of external magnetic fields. We consider two kinds of excitations from the Mott…
The emerging field of valleytronics harnesses the valley degree of freedom of electrons, akin to how electronic and spintronic devices utilize the charge and spin degrees of freedom of electrons respectively. The engineering of valleytronic…
We report in this Letter our recent low temperature transport results in a Si/SiGe quantum well with moderate peak mobility. An apparent metal-insulating transition is observed. Within a small range of densities near the transition, the…
We review recent experimental results on the metal-insulator transition and low-density phases in strongly-interacting, low-disordered Si-based two-dimensional electron systems. Special attention is given to the metallic state in…
The possibility to engineer the coupling of spin and valley physics is explored in ferroelectric oxide heterostructures with eg electronic configuration. We show that the polar structural distortion induces the appearance of spin-valley…
Sixfold-degenerate valleys in Si have attracted considerable attention for valleytronics application. Using optical pump-terahertz (THz) probe spectroscopy, we study the dynamics of valley polarization in bulk Si(001) at room temperature.…
The magnetic field and temperature dependencies of the magnetic moments of superconducting crystals of ${\rm V_{3}Si}$ have been studied. In a constant magnetic field and at temperatures somewhat below the superconducting transition…
Quantum dots in silicon are promising candidates for implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these…
By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($\sigma$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
A phase space boundary between transition and non-transition, similar to those observed in chemical reaction dynamics, is shown experimentally in a macroscopic system. We present a validation of the phase space flux across rank one saddles…
Experimental data on quantum phase transitions in two-dimensional systems (superconductor-insulator, metal-insulator, and transitions under conditions of integer quantum Hall effect) are critically analyzed.
We investigate quantum phase transitions in two-dimensional superconducting arrays with general capacitance matrices and discrete charge states. We use the perturbation theory together with the simulated annealing method to obtain the…
We theoretically investigate spin-valley-locked tunneling transport in a transition-metal dichalcogenide/ferromagnetic-insulator heterostructure under a perpendicular magnetic field, driven by the spin Seebeck effect. We demonstrate that…
The co-occurrence of phase transitions with local and global order parameters, such as the entangled magnetization and topological invariant, is attractive but has been seldom realized experimentally. Here, by using high-pressure in-situ…
Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…