Related papers: Line Junctions in the Quantum Hall Effect
We study variable range hopping in the quantum Hall effect regime in the presence of a metallic gate parallel to the plane of a two-dimensional electron gas. Screening of the Coulomb interaction by the gate causes the partial ``filling'' of…
The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous…
We present experimental results on the quantized Hall insulator in two dimensions. This insulator, with vanishing conductivities, is characterized by the quantization (within experimental accuracy) of the Hall resistance in units of the…
Two dimensional electron systems exhibiting the fractional quantum Hall effects are characterized by a quantized Hall conductance and a dissipationless bulk. The transport in these systems occurs only at the edges where gapless excitations…
Direct transitions, driven by disorder, from several integral quantum Hall states to an insulator have been observed in experiment. This finding is enigmatic in light of a theoretical phase diagram, based on rather general considerations,…
We study the quantum Hall liquid and the metal-insulator transition in a high mobility two dimensional electron gas, by means of photoluminescence and magneto-transport. In the integer and fractional regime at nu > 1/3, analyzing the…
We present a microscopic model for calculating the AC conductivity of a finite length line junction made up of two counter or co-propagating single mode quantum Hall edges with possibly different filling fractions. The effect of…
Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the…
We study the phase diagram of the quantum Hall effect in four-dimensional (4D) space. Unlike in 2D, in 4D there exists a metallic as well as an insulating phase, depending on the disorder strength. The critical exponent $\nu\approx 1.2$ of…
Constricting transport through a one-dimensional quantum point contact in the quantum Hall regime enables gate-tunable selection of the edge modes propagating between voltage probe electrodes. Here we investigate the quantum Hall effect in…
The quantum Hall effect is studied numerically in modulated two-dimensional electron systems in the presence of disorder. Based on the scaling property of the Hall conductivity as well as the localization length, the critical energies where…
Because of the bulk gap, low energy physics in the quantum Hall effect is confined to the edges of the 2D electron liquid. The velocities of edge modes are key parameters of edge physics. They were determined in several quantum Hall systems…
Transport through a tunnel junction connecting a superconductor to a spin-aligned quantum Hall fluid at filling $\nu$ is studied theoretically. The dominant transport channel at low temperatures is the tunnelling of Cooper pairs into edge…
Hybrid superconductor/semiconductor devices constitute a powerful platform where intriguing topological properties can be investigated. Here we present fabrication methods and analysis of Josephson junctions formed by a high-mobility InAs…
We have studied ballistic transport in a 1D channel formed using surface gate techniques on a back-gated, high-mobility, bilayer 2D hole system. At millikelvin temperatures, robust conductance quantization is observed in the quantum wire…
We examine the effects of electron-electron interactions on transport between edge states in a multilayer integer quantum Hall system. The edge states of such a system, coupled by interlayer tunneling, form a two-dimensional, chiral metal…
This paper describes an experimental identification and characterization of a new low temperature transport regime near the quantum Hall-to-insulator transition. In this regime, a wide range of transport data are compactly described by a…
We analyze the fractional quantization of the ballistic conductance associated with the light and heavy holes bands in Si, Ge and GaAs systems. It is shown that the formation of the localized hole state in the region of the quantum point…
We describe transport properties of two-dimensional arrays of low capacitance tunnel junctions, such as the current voltage characteristic and its dependence on external magnetic field and temperature. We discuss several experiments in…
Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$\Omega$) have been studied experimentally and…