Related papers: Quantum Hall effect in single wide quantum wells

The edge states in the integer quantum Hall effect are known to be significantly affected by electrostatic interactions leading to the formation of compressible and incompressible strips at the boundaries of Hall bars. We show here, in a…

We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing…

Two-component fractional quantum Hall systems are providing a major motivation for a large section of the physics community. Here we study two-component fractional quantum Hall systems in the spin-polarized half-filled lowest Landau level…

At total Landau level filling factor $\nu_{tot}=1$ a double layer two-dimensional electron system with small interlayer separation supports a collective state possessing spontaneous interlayer phase coherence. This state exhibits the…

In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor {\nu} = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The robustness of the plateau is only exhibited at this…

The localization behavior of noninteracting two-dimensional electrons in a random potential and strong magnetic field is of fundamental interest for the physics of the quantum Hall effect. In order to understand the emergence of power-law…

Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible state to a compressible state by tuning the bandgap at a given electron density. Likewise, variation of the…

We present in this Letter the results from two high quality, low density GaAs quantum wells. In sample A of electron density n=5.0x10^10 cm^-2, anisotropic electronic transport behavior was observed at \nu=7/2 in the second Landau level. We…

We study the coupled quantum Hall bilayers each at half-filled first excited Landau levels with varying the layer distance. Based on numerical exact diagonalization on torus, we identify two distinct phases separated by a critical layer…

The incompressible Quantum Hall strip is sensitive to charging of localized states in the cyclotron gap. We study the effect of localized states by a density functional approach and find electron density and the strip width as a function of…

An effective field theoretic description of $\nu=1$ bilayer electron systems stabilized by Coulomb repulsion in a single wide quantum well is examined using renormalization group techniques. The system is found to undergo a crossover from a…

We study the phase diagram of quantum Hall bilayer systems with total filing $\nu_T=1/2+1/2$ of the lowest Landau level as a function of layer distances $d$. Based on numerical exact diagonalization calculations, we obtain three distinct…

We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-splitting of hole-like states, which form distinct Landau levels…

We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir…

We present results of a study of double layer quantum Hall systems in which each layer has a high-index Landau level that is half-filled. Hartree-Fock calculations indicate that, above a critical layer separation, the system becomes…

We generalize the fractional quantum Hall hierarchy picture to apply to arbitrary, possibly non-Abelian, fractional quantum Hall states. Applying this to the nu = 5/2 Moore-Read state, we construct new explicit trial wavefunctions to…

We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the…

We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest…

We present new results on quantum tunneling between deep potential wells, in the presence of a strong constant magnetic field. We construct a family of double well potentials containing examples for which the low-energy eigenvalue splitting…

We present a phase diagram for a two-dimensional electron system with two populated subbands. Using a gated GaAs/AlGaAs single quantum well, we have mapped out the phases of various quantum Hall states in the density-magnetic filed plane.…