Related papers: Weak Antilocalization and Spin Precession in Quant…
We have studied the spin-orbit interaction in a high mobility two-dimensional electron gas in a GaInAs/InP heterostructure as a function of an applied gate voltage as well as a function of temperature. Highly sensitive magnetotransport…
Magnetoresistivity features connected with the spin level coincidences under tilted fields in a $\Gamma_8$ conduction band of the HgTe quantum well were found to align along straight trajectories in a $(B_\bot,B_{||})$ plane between the…
In semiconductor heterostructures, bulk and structural inversion asymmetry and spin-orbit coupling induce a k-dependent spin splitting of valence and conduction subbands, which can be viewed as being caused by momentum-dependent crystal…
InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on…
We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance - a signature of weak localisation - is observed at different…
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and…
We study the effect of magnetic scattering on transport in a system with strong structural disorder, using exact finite size calculation of the low frequency optical conductivity. At weak electron-spin coupling spin disorder leads to a…
We show that the efficiency of manipulating electron spin in semiconductor quantum wells can be enhanced by tuning the strain strength. The effect combining intrinsic and strain-induced spin splitting varies for different systems, which…
We study the spin dynamics in a high-mobility two-dimensional electron gas confined in a GaAs/AlGaAs quantum well. An unusual magnetic field dependence of the spin relaxation is found: as the magnetic field becomes stronger, the spin…
We have studied the physical processes responsible for the spin -flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation…
Weak localization corrections to conductivity of ferromagnetic systems are studied theoretically in the case when spin-orbit interaction plays a significant role. Two cases are analyzed in detail: (i) the case when the spin-orbit…
Transient magnetotransport of two-dimensional electrons with partially-inverted distribution excited by an ultrashort optical pulse is studied theoretically. The time-dependent photoconductivity is calculated for GaAs-based quantum wells by…
Recent time-resolved differential transmission and Faraday rotation measurements of long-lived electron spin coherence in quantum wells displayed intriguing parametric dependencies. For their understanding we formulate a microscopic theory…
We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier…
With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with…
We develop a semiclassical theory for spin-dependent quantum transport to describe weak (anti)localization in quantum dots with spin-orbit coupling. This allows us to distinguish different types of spin relaxation in systems with chaotic,…
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a…
Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time…
We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is…
The quantum interference corrections to the conductivity are calculated for an electron gas in asymmetric quantum wells in a magnetic field. The theory takes into account two different types of the spin splitting of the conduction band: the…