Related papers: Geometrical-confinement effects on excitons in qua…
We theoretically study the optical properties and the electronic structure of highly elongated quantum dots (quantum dashes) and show how carrier trapping due to geometrical fluctuations of the confining potential affects the excitonic…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
Quantum dots are arguably one of the best platforms for optically accessible spin based qubits. The paramount demand of extended qubit storage time can be met by using quantum-dot-confined dark exciton: a longlived electron-hole pair with…
Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb…
Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian.…
We theoretically study the optical properties and the electronic structure of highly elongated quantum dots (quantum dashes) and show how geometrical fluctuations affect the excitonic spec- trum of the system. The dependence of the…
Excitons -- bound electron-hole pairs -- play a central role in light-matter interaction phenomena, and are crucial for wide-ranging applications from light harvesting and generation to quantum information processing. A long-standing…
The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed…
We use an atomistic model to consider the effect of shape symmetry breaking on the optical properties of self-assembled InAs/GaAs quantum dots. In particular, we investigate the energy level structure and optical activity of the lowest…
Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied…
We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a…
We study the effect of magnetic field and geometric confinement on excitons confined to a quantum ring. We use analytical matrix elements of the Coulomb interaction and diagonalize numerically the effective-mass Hamiltonian of the problem.…
We present both experimental and theoretical results on the influence of a magnetic field on excitons in semiconductor quantum dots. We find a pronounced difference between the strong and weak confinement regimes. For weak confinement, the…
The effect of Gamma-X mixing on the energy levels fine structure of indirect in k-space excitons in an ensemble of (In,Al)As/AlAs quantum dots with type I band alignment was experimentally studied. Using the methods of optical spin…
We study the coherent light-matter interactions of GaAs quantum wells associated with excitons, biexcitons and many-body effects. For most polarization configurations, excitonic features dominate the phase-resolved two-dimensional…
We review the effects of Coulomb correlation on the linear and non-linear optical properties of semiconductor quantum wires, with emphasis on recent results for the bound excitonic states. Our theoretical approach is based on generalized…
We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of…
A transition from a cylindrical quantum dot to a highly elongated quantum dash is theoretically studied here with an atomistic approach combining empirical tight binding for single particle states and configuration interaction method for…
The electronic and optical properties of self-assembled InN/GaN quantum dots (QDs) are investigated by means of a tight-binding model combined with configuration interaction calculations. Tight-binding single particle wave functions are…
We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties…