Related papers: Magnetotransport with two occupied subbands in a S…
A momentum balance equation is developed to investigate the magnetotransport properties in monolayer molybdenum disulphide when a strong perpendicular magnetic field and a weak in-plane electric field are applied simultaneously. At low…
We report the magneto-transport properties and electronic structures of BaZnBi$_2$. BaZnBi$_2$ is a quasi-two-dimensional (2D) material with metallic behavior. The transverse magnetoresistance (MR) depends on magnetic field linearly and…
We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high…
Metallic Bi2Te3 crystalline sheets with the room-temperature resistivity of above 10 m{\Omega} cm were prepared and their magnetoresistive transport was measured in a field of up to 9 Tesla. The Shubnikov de Haas oscillations were…
Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where…
Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition…
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…
We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials…
We report direct experimental evidence that the insulating phase of a disordered, yet strongly interacting two-dimensional electron system (2DES) becomes unstable at low temperatures. As the temperature decreases, a transition from…
We use magneto-transport measurements to investigate the electronic structure of WTe2 single crystals. A non-saturating and parabolic magnetoresistance is observed in the temperature range between 2.5 to 200 K and magnetic fields up to 8 T.…
An analytic theory is developed for the diagonal conductivity $\sigma_{xx}$ of a 2D conductor which takes account of the localized states in the broaden Landau levels. In the low-field region $\sigma_{xx}$ display the Shubnikov-de Haas…
High magnetic fields have proven instrumental in exploring the physical properties of condensed matter, leading to groundbreaking discoveries such as the quantum Hall effect in 2D heterostructures and quantum oscillations in cuprate…
Magneto-transport measurements have been carried out on Bi2-xSbxSe3 (x = 0, 0.05, 0.1, 0.3, 0.5) single crystals at 4.2 K temperature in the magnetic field range of -15 T to 15 T. Shubnikov-de Haas (SdH) oscillations of 2D nature were…
We derive an analytical expression for the longitudinal magnetoconductivity $\sigma_{zz}$ in layered conductors in presence of a quantizing magnetic field perpendicular to the layers and for short-range in-plane impurity scattering in frame…
We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and…
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and…
We have investigated in frame of the quantum transport theory the magnetic quantum oscillations of the longitudinal magnetoresistance $\rho_{zz}$ in quasi two-dimensional metals for a magnetic field perpendicular to the layers. Giant…
We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K.…
In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate…
YSb crystals are grown and the transport properties under magnetic field are measured. The resistivity exhibits metallic behavior under zero magnetic field and the low temperature resistivity shows a clear upturn once a moderate magnetic…