Related papers: Experimental Evidence for a Coulomb Gap in Two Dim…
We investigate a modified Anderson model at the large-$N$ limit, where Coulomb interaction is replaced by Sachdev-Ye-Kitaev random interaction. The resistivity of conduction electron $\rho_{c}$ has a minimum value around temperature…
Motivated by evidence of local electron-electron attraction in experiments on disordered insulating films, we propose a new two-component Coulomb glass model that combines strong disorder and long-range Coulomb repulsion with the additional…
Variable temperature scanning tunneling microscopy/spectroscopy studies on (110) oriented epitaxial thin films of La$_{0.350}$Pr$_{0.275}$Ca$_{0.375}$MnO$_3$ are reported in the temperature range of 77 to 340 K. The films, grown on lattice…
The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…
A model is presented for two-dimensional superconductivity at semiconductor-on-metal interfaces mediated by Coulomb interactions between electronically-active interface charges in the semiconductor and screening charges in the metal. The…
The existence of a metal-insulator transition at zero magnetic field in two- dimensional electron systems has recently been confirmed in high mobility Si-MOSFETs. In this work, the temperature dependence of the resistivity of gated…
Large fluctuations of conductivity with time are observed in a low-mobility two-dimensional electron system in silicon at low electron densities $n_s$ and temperatures. A dramatic increase of the noise power ($\propto 1/f^{\alpha}$) as…
We study Coulomb blockade oscillations of thermoelectric coefficients of a single electron transistor based on a quantum dot strongly coupled to one of the leads by a quantum point contact. At temperatures below the charging energy E_C the…
Electron interactions are pivotal for defining the electronic structure of quantum materials. In particular, the strong electron Coulomb repulsion is considered the keystone for describing the emergence of exotic and/or ordered phases of…
We report on transport measurement performed on a room-temperature-operating ultra-small Coulomb blockade devices with a silicon island of sub-5nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of…
Lateral charge transport of a two-dimensional (2D) electronic system can be much influenced by feeding a current into another closely spaced 2D conductor, known as the Coulomb drag phenomenon -- a powerful probe of electron-electron…
We derive and evaluate expressions for the frictional Coulomb drag between disordered two-dimensional electron gas layers. Our derivation is based on the memory-function formalism and the expression for the drag reduces to previously known…
Based on a thermodynamic approach, we have calculated the resistivity of a 2D electron gas, assumed $dissipationless$ in a strong quantum limit. Standard measurements, with extra current leads, define the resistivity caused by a combination…
We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, $0.16 \times 10^{10}…
The performance and accuracy of quantum electronics is substantially degraded when the temperature of the electrons in the devices is too high. The electron temperature can be reduced with appropriate thermal anchoring and by filtering both…
We observe and comprehend the dynamical Coulomb blockade suppression of the electrical conductance across an electronic quantum channel submitted to a temperature difference. A broadly tunable, spin-polarized Ga(Al)As quantum channel is…
Optical measurements of the real and imaginary frequency dependent conductivity of uncompensated n-type silicon are reported. The experiments are done in the quantum limit, $ \hbar\omega > k_{B}T$, across a broad doping range on the…
Recent research on excitonic insulator has progressed mainly based on narrow bandgap semiconductor or semimetal. Herein, we realize excitonic insulator based on two-dimensional (2D) wide band gap diamond with transition temperature as high…
The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2…
We have simulated energy relaxation and equilibrium dynamics in Coulomb Glasses using the random energy lattice model. We show that in a temperature range where the Coulomb Gap is already well developed, (T=0.03-0.1) the system still…