Related papers: Experimental Evidence for a Coulomb Gap in Two Dim…
The cooling of two-dimensional electrons in silicon-metal-oxide semiconductor field effect transistors is studied experimentally. Cooling to the lattice is found to be more effective than expected from the bulk electron-phonon coupling in…
We calculate the critical temperature below which an excitonic insulator exists at the pressure-induced semiconductor-semimetal transition. Our approach is based on an effective-mass model for valence and conduction band electrons…
Properties of superfluid states of two-dimensional electron systems with critical antiferromagnetic fluctuations are investigated. These correlations are found to result in the emergence of rapidly varying in the momentum space terms in all…
We investigate a family of radially symmetric Coulomb gas systems at inverse temperature $\beta = 2$. The family is characterised by the property that the density of the equilibrium measure vanishes on a ring at radius $r_*$, which lies…
Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the…
The main mechanism of energy loss in capacitors with nanoscale dielectric films is leakage currents. Using the example of Al-Al2O3-Al, we show that there are two main contributions, namely the cold field emission effect and the hopping…
We investigate the lattice Coulomb glass model in three dimensions via Monte Carlo simulations. No evidence for an equilibrium glass phase is found down to very low temperatures, although the correlation length increases rapidly near T=0. A…
In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the…
The electron self-energy for long-range Coulomb interactions plays a crucial role in understanding the many-body physics of interacting electron systems (e.g. in metals and semiconductors), and has been studied extensively for decades. In…
We present thermal and electrical transport measurements of low-density (10$^{14}$ m$^{-2}$), mesoscopic two-dimensional electron systems (2DESs) in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures. We find that even in the…
The advancement of fabrication and lithography techniques of semiconductors have made it possible to study bi-layer systems made of two electronic layers separated by distances of several hundred Angstroms. In this situation the electrons…
We calculated the Coulomb drag contribution to the resistivity and the transresistivity for a double layer system, in which the passive layer is a Wigner crystal pinned by impurities, and the active one is a metal. We found that in quasi…
We study a one-dimensional model of interacting conduction electrons with a two-fold degenerate band away from half filling. The interaction includes an on-site Coulomb repulsion and Hund's rule coupling. We show that such one-dimensional…
Correlations between electrons and the effective dimensionality are crucial factors that shape the properties of an interacting electron system. For example, the onsite Coulomb repulsion, U, may inhibit, or completely block the intersite…
In the dilute two-dimensional electron system in silicon, we show that the temperature below which Shubnikov-de Haas oscillations become apparent is approximately the same as the temperature below which an exponential decrease in resistance…
Electronic transport properties of the Si(111)-$(\sqrt{3}\times\sqrt{3})$-Sn surface formed on low doped Si substrates are studied using two-probe conductivity measurements and tunnelling spectroscopy. We demonstrate that the ground state…
We present here a microscopic two-band model based on the structure of energetic levels of holes in $\mathrm{CuO}_{2}$ conducting layers of cuprates. We prove that two energetically near-lying interacting bands can explain the electron-hole…
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the…
Recently, Coulomb blockade physics was observed at room temperature in a carbon nanotube single-electron transistor (H. W. Ch. Postma, et. al., Science 293, 76 (2001)). In this work, we suggest that these devices may be promising for…
We analyze an interplay between Coulomb blockade and quantum fluctuations in a coherent conductor (with dimensionless conductance $g \gtrsim 1$) attached to an Ohmic shunt. We demonstrate that at T=0 the system can be either an insulator or…