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We study the local states within the polariton bandgap that arise due to deep defect centers with strong electron-phonon coupling. Electron transitions involving deep levels may result in alteration of local elastic constants. In this case,…
Electronic properties of III-V semiconductor alloys are examined using first principles with the focus on the spatial localization of electronic states. We compare localization at the band edges due to various isovalent impurities in a host…
We study in-gap electronic states induced by a nonmagnetic defect with short-range potential in two-dimensional topological insulators and trace their evolution as the distance between the defect and the boundary changes. The defect located…
We show that edge states similar to those known for topological insulators exist in two-dimensional electron system with one-band spectrum in the presence of heterogeneous spin-orbit interaction (SOI). These states appear at boundaries…
Free standing InP quantum dots have previously been theoretically and experimentally shown to have a direct band gap across a large range of experimentally accessible sizes. We demonstrate that when these dots are embedded coherently within…
In a tight binding framework, we analyze the characteristics of electronic states in strongly disordered materials (hopping sites are placed randomly with no local order) with tunneling matrix elements decaying exponentially in the atomic…
The spectrum of electronic states at 30000--33000 cm$^{-1}$ in hafnium fluoride has been studied using (1+1) resonance-enhanced multi-photon ionization (REMPI) and (1+1$'$) REMPI. Six $\Omega' = 3/2$ and ten $\Pi_{1/2}$ vibronic bands have…
We study the two-body problem for two-dimensional electron systems in a symmetrized Bernevig-Hughes-Zhang model which is widely used to describe topological and conventional insulators. The main result is that two interacting electrons can…
In this Letter, it is shown that interactions can facilitate the emergence of topological edge states of quantum-degenerate bosonic systems in the presence of a harmonic potential. This effect is demonstrated with the concrete model of a…
Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is…
The electron correlations in narrow energy bands are examined in framework of the Hubbard model. The single-particle Green function and energy spectrum are obtained in paramagnetic state at half-filling by means of new two-pole…
We investigate edge properties of a gapful rectangular graphene quantum dot in a staggered potential. In such a system gap states with discrete and closely spaced energy levels exist that are spatially located on the left or right zigzag…
We consider plane junctions with graphene electrodes, which are formed by a single-level system ("molecule") placed between the edges of two single-layer graphene half planes. We calculate the edge Green functions of the electrodes and the…
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state…
We study edge-states in graphene systems where a bulk energy gap is opened by inversion symmetry breaking. We find that the edge-bands dispersion can be controlled by potentials applied on the boundary with unit cell length scale. Under…
We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling…
We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is…
Using the method of energy-level statistics, the localization properties of electrons moving in two dimensions in the presence of a perpendicular random magnetic field and additional random disorder potentials are investigated. For this…
We study the electronic structure of graphene with a single substitutional vacancy using a combination of the density-functional, tight-binding, and impurity Green's function approaches. Density functional studies are performed with the…
We have calculated the electronic band structure of the (100) surface of the III--V zinc blende semiconductor compounds, using the standard tight binding method and the surface Green's function matching method. We have found that the…