Related papers: Fractional quantum Hall effect in higher Landau le…
The unexpected appearance of a fractional quantum Hall effect (FQHE) plateau at $\nu=2+6/13$~ [Kumar \emph{et al.}, Phys. Rev. Lett. {\bf 105}, 246808 (2010)] offers a clue into the physical mechanism of the FQHE in the second Landau level…
We present a spectrum of experimental data on the fractional quantum Hall effect (FQHE) states in the first excited Landau level, obtained in an ultrahigh mobility two-dimensional electron system (2DES) and at very low temperatures and…
We present activation gap measurements of the fractional quantum Hall effect (FQHE) in the second Landau level. Signatures for 14 (5) distinct incompressible FQHE states are seen in a high (low) mobility sample with the enigmatic 5/2 even…
The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb…
Motivated by two independent experiments revealing a resistance minimum at the Landau level (LL) filling factor $\nu=2+4/9$, characteristic of the fractional quantum Hall effect (FQHE) and suggesting electron condensation into a yet unknown…
The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for…
We present a quantitative study of most prominent incompressible quantum Hall states in the partially filled first excited Landau level (LL1) which have been recently studied experimentally by Choi et al. The pseudopotential describing the…
The fractional quantum Hall effect (FQHE) in the second Landau level (SLL) likely stabilizes non-Abelian topological orders. Recently, a parton sequence has been proposed to capture many of the fractions observed in the SLL [Ajit C. Balram,…
The fractional quantum Hall effect (FQHE) in the second orbital Landau level at filling factor 5/2 remains enigmatic and motivates our work. We consider the effect of the quasi-2D nature of the experimental FQH system on a number of FQH…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
We report ultra-low temperature experiments on the obscure fractional quantum Hall effect (FQHE) at Landau level filling factor $\nu$=5/2 in a very high mobility specimen of $\mu=1.7 \times 10^7$ cm$^2$/Vs. We achieve an electron…
We report on our theoretical investigations that point to the possibility of a fractional quantum Hall effect with partial spin polarization at $\nu=3/8$. The physics of the incompressible state proposed here involves p-wave pairing of…
It has been well-known that topological phenomena with fractional excitations, i.e., the fractional quantum Hall effect (FQHE) \cite{Tsui1982} will emerge when electrons move in Landau levels. In this letter, we report the discovery of the…
We consider the fractional quantum Hall effect (FQHE) at the filling factor $8/17$, where signatures of incompressibility have been observed in the zeroth Landau level of bilayer graphene. We propose an Abelian state described by the…
The spin-polarized even-denominator fractional quantum Hall (FQH) states in the second Landau level (LL), i.e. 5/2 and 7/2, may possess novel quasi-particle excitations obeying non-Abelian statistics. However, the spin polarization of the…
The nature of the state at low Landau-level filling factors has been a longstanding puzzle in the field of the fractional quantum Hall effect. While theoretical calculations suggest that a crystal is favored at filling factors $\nu\lesssim…
We examine the quantum phase diagram of the fractional quantum Hall effect in the lowest Landau level in half-filled bilayer structures as a function of tunneling strength and layer separation. Using numerical exact diagonalization we…
In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…
The observation of new insulating phases of two-dimensional electrons in the first excited Landau level is reported. These states, which are manifested as re-entrant integer quantized Hall effects, exist alongside well-developed…
Quantum Hall states at filling fraction $\nu$=5/2 are examined by numerical diagonalization. Spin-polarized and -unpolarized states of systems with $N\le 18$ electrons are studied, neglecting effects of Landau level mixing. We find that the…