Related papers: Multiband tight--binding approach to tunneling in …
We develop an atomistic, nearest-neighbor sp3s* tight-binding Hamiltonian to investigate the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model we calculate that the incorporation of dilute concentrations of Bi…
Rapid design and development of the emergent ultra-wide bandgap semiconductors Ga$_2$O$_3$ and Al$_2$O$_3$ requires a compact model of their electronic structures, accurate over the broad energy range accessed in future high-field,…
We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density…
We present a computationally efficient transferable single-band tight-binding model (SBTB) for spin polarized transport in heterostructures with an effort to capture the band structure effects. As an example, we apply it to study transport…
A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding…
Coherent transport in Nb/GaAs superconductor-semiconductor microstructures is presented. The structures fabrication procedure is based on delta-doped layers grown by molecular-beam-epitaxy near the GaAs surface, followed by an As cap layer…
In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including two-dimensional semiconductors such as hexagonal boron…
The wave function and binding energy for shallow donors in GaAs are calculated within the tight binding (TB) approach, for supercells containing up to two million atoms. The resulting solutions, coupled with a scaling law, allow…
Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any…
This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a…
Motivated by observation of very high tunnel magnetoresistance (TMR) in Fe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model for these devices based on a single-band tight-binding approximation. An effort is made to…
We use a fully relativistic layer Green's functions approach to investigate spin-dependent tunneling through a symmetric indirect band gap barrier like GaAs/AlAs/GaAs heterostructure along [100] direction. The method is based on Linear…
Tunneling of electrons through the barriers in heterostructures devices is investigated by using the unified Transfer Matrix Method. The effect of barrier width on electron transmission coefficients has also been examined for different…
Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of…
Theoretical research on electronic properties in mesoscopic condensed matter systems has focused primarily on the electron charge freedom degrees, while its corresponding spin freedom degrees have not yet received the same attention.…
We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V…
The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we…
Several models of thermionic energy nanoconverters have been proposed to study the transport phenomena that take place in electronic devices. For example, in resonant tunneling junctions those phenomena are manifested through the…