Related papers: Efficient current-induced domain-wall displacement…
The effect of impurity and domain-wall scattering on the electrical conductivity of disordered mesoscopic magnetic thin films is studied by use of computer simulation. The results indicate a reduction of resistivity due to a domain wall,…
The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient…
Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare…
The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic…
The dynamic observation of domain wall motion induced by electric field in magnetoelectric iron garnet film is reported. Measurements in 800 kV/cm electric field pulses gave the domain wall velocity ~45 m/s. Similar velocity was achieved in…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic…
We report field- and current-induced domain wall (DW) depinning experiments in Ta/Co20Fe60B20/MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of…
The static configuration of ferroelectric domain walls was investigated using atomic force microscopy on epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of domain wall roughness reveal a power law growth of the correlation function of…
By laser pump-probe time-resolved coherent magnetic X-ray diffraction imaging, we have measured the migration velocity of antiferromagnetic domain walls in the Mott insulator Sr2IrO4 at 100 K. During the laser-induced demagnetization, we…
Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded…
The current-induced motion of a domain wall in a semicircle nanowire with applied Zeeman field is investigated. Starting from a micromagnetic model we derive an analytical solution which characterizes the domain-wall motion as a harmonic…
We study theoretically the current-induced magnetic domain wall motion in a metallic nanowire with perpendicular magnetic anisotropy. The anisotropy can reduce the critical current density of the domain wall motion. We explain the reduction…
We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall…
The coupling between a current and a Bloch wall is examined in the half-metal limit of the double exchange model. The conduction electrons transfer angular momentum to the Bloch wall with 100% efficiency in the absence of pinning. The wall…
Experimental efforts to stabilize ferromagnetism in ultrathin films of transition metal oxides have so far failed, despite expectations based on density functional theory (DFT) and DFT+U. Here, we investigate one of the most promising…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…
Spin-polarized electric current exerts torque on local magnetic spins, resulting in magnetic domain-wall (DW) motion in ferromagnetic nanowires. Such current-driven DW motion opens great opportunities toward next-generation magnetic devices…
Graphene multilayers with flat moir\'e minibands can exhibit the quantized anomalous Hall effect due to the combined influence of spontaneous valley polarization and topologically non-trival valley-projected bands. The sign of the Hall…