Related papers: Transit-Time Spin Field-Effect-Transistor
We present a class of Rashba systems in hexagonal semiconducting compounds, where an electrical control over spin-orbital texture is provided by their bulk ferroelectricity. Our first-principles calculations reveal a number of such…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including…
In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that…
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…
The phenomenon of mesoscopic Spin-Hall effect reveals in a nonequilibrium spin accumulation (driven by electric current) at the edges of a ballistic conductor or, more generally, in the regions with varying electron density. In this paper…
We present numerical calculations of the ballistic spin-transport properties of quasi-one-dimensional wires in the presence of the spin-orbit (Rashba) interaction. A tight-binding analog of the Rashba Hamiltonian which models the Rashba…
Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the…
Spin dependent transport in a multi-terminal mesoscopic ring is investigated in presence of Rashba and Dresselhaus spin-orbit interactions. Within a tight-binding framework we use a general spin density matrix formalism to evaluate all…
Current studies of non-reciprocal superconducting (SC) transport have centered on the forward-backward asymmetry of the critical current measured along a single axis. In most realizations, this diode effect is achieved via introducing…
We study how the Rashba spin-orbit interaction influences unconventional superconductivity in a two dimensional electron gas partially spin-polarized by a magnetic field. Somewhat surprisingly, we find that for all field orientations, only…
We theoretically consider the spin Seebeck effect, the charge Seebeck coefficient, and the thermoelectric figure of merit in superconducting hybrid structures including either magnetic textures or intrinsic spin-orbit coupling. We…
Using the non-equilibrium statistical operator method (NSO), we have investigated the spin transport through the interface in a semiconductor/ferromagnetic insulator hybrid structure. We have analyzed the approximation of effective…
Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low…
We present a microscopic theory of the superconducting proximity effect in a semiconducting thin film with spin-orbit interaction ($N_{SO}$) in an external magnetic field. We demonstrate that an effective 1D Hamiltonian which describes…
We report a giant spin Hall effect (SHE) in {\beta}-W thin films. Using spin torque induced ferromagnetic resonance with a {\beta}-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |\theta|=0.30\pm0.02, large enough for an…
It is often assumed that in a superconductor without spin-triplet pairing, the formation of unconventional spin-triplet densities requires the spin-orbit interaction in combination with either broken inversion symmetry or broken…
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like…
We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…