Related papers: Precise asymptotics for a variable-range hopping m…
A systematic study of the transport energy in disordered organic semiconductors based on variable range hopping theory has been presented here. The temperature, electric field, material disorder and carrier concentration dependent transport…
Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower…
In a film with large dielectric constant $\kappa$ the electric field of an electron spreads inside the film before exiting the film at large distances of order of $\kappa d$ ($d$ is the film width). This leads to the logarithmic Coulomb…
We present a theory of the DC electron transport in insulators near Anderson-Mott transitions under the influence of coexisting electron correlation and randomness. At sufficiently low temperatures, the DC electron transport in…
Warming in complex physical systems, in particular global warming, attracts significant contemporary interest. It is essential, therefore, to understand basic physical mechanisms leading to overheating. It is well known that application of…
A model of strongly disordered lattice system with long-range Coulomb interactions between localized charge carriers has been considered. The total electronic energy is characterized by the presence of multiple metastable minima (including…
We study transport of interacting electrons in a low-dimensional disordered system at low temperature $T$. In view of localization by disorder, the conductivity $\sigma(T)$ may only be non-zero due to electron-electron scattering. For weak…
The variable range hopping (VRH) model has been widely applied to describe electrical transport in disordered systems, providing theoretical formulas to fit temperature-dependent electric conductivity. These models rely on oversimplified…
Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum…
The resistivity of a dense crystalline array of semiconductor nanocrystals (NCs) depends in a sensitive way on the level of doping as well as on the NC size and spacing. The choice of these parameters determines whether electron conduction…
We compute the transport properties of one dimensional interacting electrons, also known as a Luttinger liquid. We show that a renormalization group study allows to obtain the temperature dependence of the conductivity in an intermediate…
We study the finite-temperature transport of electrons coupled to anharmonic local phonons. Our focus is on the high-temperature incoherent regime, where controlled calculations are possible both for weak and strong electron--phonon…
For hopping transport in disordered materials, the mobility of charge carriers is strongly dependent on temperature and the electric field. Our numerical study shows that both the energy distribution and the mobility of charge carriers in…
Based on a selfconsistent theory of localization we study the electron transport properties of a disordered system in the framework of the Anderson model on a Bethe lattice. In the calculation of the dc conductivity we separately discuss…
Variable-range hopping transport along short one-dimensional wires and across the shortest dimension of thin three-dimensional films and narrow two-dimensional ribbons is studied theoretically. Geometric and transport characteristics of the…
Dynamical conductivity in a disordered one-dimensional model of interacting fermions is studied numerically at high temperatures and in the weak-interaction regime in order to find a signature of many-body localization and vanishing d.c.…
The conduction electrons' dephasing rate, $\tau_{\phi}^{-1}$, is expected to vanish with the temperature. A very intriguing apparent saturation of this dephasing rate in several systems was recently reported at very low temperatures. The…
At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate…
It is shown that for the hopping regime, the thermopowers in both finite two-terminal and three-terminal systems are governed by the edges of the samples. This is due to the fact that the energy transfer between a transport electron and a…
We analyze the asymptotic behavior corresponding to the arbitrary high conductivity of the heat in the thermoelectric devices. This work deals with a steady-state multidimensional thermistor problem, considering the Joule effect and both…