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Electrons in conductors suffer frequent scatterings with defects and phonons, and the diffusive macroscopic behaviors are determined by an external electric field through Ohms law. If electrons are no longer diffusive, the Ohmic description…
We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…
Proximity to a Mott insulating phase is likely to be an important physical ingredient of a theory that aims to describe high-temperature superconductivity in the cuprates. Quantum cluster methods are well suited to describe the Mott phase.…
We calculate the low temperature properties of an acoustic polaron in three dimensions in thermal equilibrium at a given temperature using a specialized path integral Monte Carlo method. In particular we find numerical evidence that the…
Spectral, optical and transport properties of an anisotropic three-dimensional Holstein model are studied within the adiabatic approximation. The parameter regime is appropriate for organic semiconductors used in single crystal based field…
Consider a multichannel closed ring with disorder. In the semiclassical treatment its conductance is given by the Drude formula. Quantum mechanics challenge this result both in the limit of strong disorder (eigenstates are not…
In hole-doped high-Tc superconductors, thermal conductivity increases drastically just below Tc, which has been considered as a hallmark of a nodal gap. In contrast, such a coherence peak in thermal conductivity is not visible in…
We study the thermoelectric transport properties in the three-dimensional Anderson model of localization near the metal-insulator transition [MIT]. In particular, we investigate the dependence of the thermoelectric power S, the thermal…
A new computational method for finite-temperature properties of strongly correlated electrons is proposed by extending the variational Monte Carlo method originally developed for the ground state. The method is based on the path integral in…
W. Chr. Germs, K. Guo, R. A. J. Janssen, and M. Kemerink [1] recently measured the temperature and concentration dependent seebeck coefficient in organic thin film transistor and found the seebeck coefficient increases with carrier…
The superconducting properties of a layered system are analyzed for the cases of zero- and non-zero angular momentum of the pairs. The effective thermodynamic potential for the quasi-2D XY-model for the gradients of the phase of the order…
We propose an approach to the problem of low but finite temperature dynamical correlation functions in integrable one-dimensional models with a spectral gap. The approach is based on the analysis of the leading singularities of the operator…
Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of…
Recent advances in nano-thermometry motivate the extension of the Landauer-B\"uttiker scattering theory as to include the non-local dissipation associated with charge transport. Such a program is implemented by describing the inelastic…
We introduce thermometers to define the local temperature of an electronic system driven out-of-equilibrium by local AC fields. We also define the effective temperature in terms of a local fluctuation-dissipation-relation. We show that…
Anderson localization1 in a random system is sensitive to a distance dependence of the excitation transfer amplitude V(r). If V(r) decreases with the distance r slower than 1/r^d in a d-dimensional system then all excitations are…
Dots are ideal systems to study fundamentals on heat transfer at the nanoscale and promising nanoscale heat-engines and thermal devices. Here, we report on the validation of our theoretical model on the thermal conductance of a metallic dot…
Whether in the thermodynamic limit of lattice length infinite, hole concentration tending to zero, nonzero temperature, and U/t > 0 the charge stiffness of the 1D Hubbard model with first neighbor transfer integral t and on-site repulsion U…
The Miller-Abrahams (MA) random resistor network is given by a complete graph on a marked simple point process with edge conductivities depending on the marks and decaying exponentially in the edge length. As Mott random walk, it is an…
I discuss the properties of electron states in amorphous Si based on large scale calculations with realistic several thousand atom models. A relatively simple model for the localized to extended (Anderson) transition is reviewed. Then, the…