Related papers: Integer quantum Hall effect on a six valley hydrog…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
It is shown that the statements about the observation of the transitions between the insulating phase and the integer quantum Hall effect phases with the quantized Hall conductivity $\sigma_{xy}^{q}$ $\geq 3e^{2}/h$ made in a number of…
We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and…
We study the spin quantum Hall effect and transitions between Hall plateaus in quasi two-dimensional network models consisting of several coupled layers. Systems exhibiting the spin quantum Hall effect belong to class C in the symmetry…
We discuss the behaviour of a quantum Hall system when two Landau levels with opposite spin and combined filling factor near unity are brought into energetic coincidence using an in-plane component of magnetic field. We focus on the…
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top…
We study non-Abelian fractional quantum Hall state in double layer systems at total filling factor $1/2$. Recent progresses in two-dimensional van der Waals materials made it possible to explore the regime with very small interlayer…
A possible realization of Hall conductivity, quantized at odd integer factors of $e^2/h$ for graphene's honeycomb lattice is proposed. I argue that, in the presence of \emph{uniform} real and pseudo-magnetic fields, the valley degeneracy…
The quantum Hall effect is one of the most important developments in condensed matter physics of the 20th century. The standard explanations of the famous integer quantized Hall plateaus in the transverse resistivity are qualitative, and…
We present a new theoretical approach for the integer quantum Hall effect, which is able to describe the inter-plateau transitions as well as the transition to the Hall insulator. We find two regimes (metallic and insulator like) of the top…
Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive…
We study the electronic structures and topological properties of $(M+N)$-layer twisted graphene systems. We consider the generic situation that $N$-layer graphene is placed on top of the other $M$-layer graphene, and is twisted with respect…
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength…
Quantum antidot, a small potential hill introduced into a two-dimensional electron system, presents an attractive tool to study quantum mechanics of interacting electrons.Here, we report experiments on electron resonant tunneling via a…
We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates…
Experiments on the fractional quantized Hall effect in the zeroth Landau level of graphene have revealed some striking differences between filling factors in the ranges 0<|\nu|<1 and 1<|\nu|<2. We argue that these differences can be largely…
We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass…
We study the spectral properties of infinite rectangular quantum graphs in the presence of a magnetic field. We study how these properties are affected when three-dimensionality is considered, in particular, the chaological properties. We…
Magnetotransport of conventional semiconductor based double layer systems with barrier suppressed interlayer tunneling has been a rewarding subject due to the emergence of an interlayer coherent state that behaves as an excitonic…