Related papers: Integer quantum Hall effect on a six valley hydrog…
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show…
A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers and influences…
We examine the magnetic field driven insulator-quantum Hall-insulator transitions of the two dimensional hole gas in a Ge/SiGe quantum well. We observe direct transitions between low and high magnetic field insulators and the $\nu=1$…
A two-dimensional array of quantum dots in a magnetic field is considered. The electrons in the quantum dots are described as unitary random matrix ensembles. The strength of the magnetic field is such that there is half a flux quantum per…
We investigate non-equilibrium transport in the reentrant integer quantum Hall phases of the second Landau level. At high currents, we observe a transition from the reentrant integer quantum Hall phases to classical Hall-conduction.…
We study the the interplay between spontaneously broken valley symmetry and spatial disorder in multivalley semiconductors in the quantum Hall regime. In cases where valleys have anisotropic electron dispersion a previous long-wavelength…
We report results of numerical studies of the integer quantum Hall effect in a tight binding model on a two-dimensional square lattice with non-interacting electrons, in the presence of a random potential as well as a uniform magnetic field…
We consider the localization of independent electron orbitals in double-layer two-dimensional electron systems in the strong magnetic field limit. Our study is based on numerical Thouless number calculations for realistic microscopic models…
We report experimental studies of disorder-induced transitions between quantum-Hall, metallic, and insulating states in a very dilute two-dimensional electron system in silicon at a magnetic field corresponding to Landau level filling…
A square lattice model which exhibits a nonzero quantized Hall conductance in a zero net magnetic field at certain values of the parameters is presented. The quantization is due to the existence of a topological winding number that…
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…
The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface…
A set of stacked two-dimensional electron systems in a perpendicular magnetic field exhibits a three-dimensional version of the quantum Hall effect if interlayer tunneling is not too strong. When such a sample is in a quantum Hall plateau,…
We study point-contact tunneling in the integer quantum Hall state of bosons. This symmetry-protected topological state has electrical Hall conductivity equal to $2 e^2/h$ and vanishing thermal Hall conductivity. In contrast to the integer…
We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest…
Short-range electron-electron interactions are incorporated into the network model of the integer quantum Hall effect. In the presence of interactions, the electrons, propagating along one link, experience exchange scattering off the…
Experimental studies of the transitions from a primary quantum Hall (QH) liquid at filling factor 1/k (with k an odd integer) to the insulator have indicated a ``quantized Hall insulator'' (QHI) behavior: while the longitudinal resistivity…
Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both…
We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the…