Related papers: Surface-acoustic-wave-driven luminescence from a l…
We demonstrate ultra-sensitive measurement of fluctuations in a surface-acoustic-wave~(SAW) resonator using a hybrid quantum system consisting of the SAW resonator, a microwave (MW) resonator and a superconducting qubit. The nonlinearity of…
Surface acoustic wave (SAW) propagation is a powerful method to investigate 2D electron systems. We show how SAW observables are influenced by coupling to the 2D massless Dirac electrons of graphene and argue that Landau oscillations can be…
We have measured the surface acoustic wave velocity shift in a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES) in a low-density regime ($<$ $10^{10}$ cm$^{-2}$) at zero magnetic field. The interaction of the…
Recently, it was shown that surface electromagnetic waves at interfaces between continuous homogeneous media (e.g., surface plasmon-polaritons at metal-dielectric interfaces) have a topological origin [K. Y. Bliokh et al., Nat. Commun. 10,…
We report the fabrication of self-assembled, strain-free GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the…
Single-molecule electronics has been envisioned as the ultimate goal in the miniaturisation of electronic circuits. While the aim of incorporating single-molecule junctions into modern technology still proves elusive, recent developments in…
We have investigated the conditions necessary to achieve stronger Cherenkov-like instability of plasma waves leading to emission in the terahertz (THz) regime for semiconductor quantum wells (QWs). The surface response function is…
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double heterostructure FETs exhibit a two- dimensional electron gas…
Surface Acoustic Wave gas sensors have garnered increasing attention as highly sensitive, miniaturized, and wireless compatible platforms for molecular detection. Their unique ability to convert surface perturbations into measurable…
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 {\deg}C do not exhibit any detectable luminescence even at 10 K. In the…
We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to…
A surface wave antenna operating in the 2.4 GHz band and efficient for launching surface electromagnetic waves at metal/dielectric interfaces is presented. The antenna operation is based on the strong field enhancement at the antenna tip,…
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…
High frequency (ac) conductivity in the single quantum well AlGaAs/GaAs/AlGaAs with high mobility was investigated by contactless acoustic methods in the fractional quantum Hall effect regime in perpendicular and tilted magnetic fields. We…
We report the observation of two additional sub-natural line width quantum interference in the $D_2$ manifold of $^{39}K$ vapor, in addition to the usual single Electromagnetically induced transparency peak. The other two features appear…
We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot created in a long depleted channel with surface acoustic waves (SAWs). We demonstrate that such a process is characterized by an…
Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically…
We demonstrate that GaN formed in a Nanowall Network (NwN) morphology can overcome fundamental limitations in optoelectronic devices, and enable high light extraction and effective Mg incorporation for efficient p-GaN. We report the growth…
The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A…
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed,…