Related papers: Transconductance of a double quantum dot system in…
We review mechanisms of low-temperature electronic transport through a quantum dot weakly coupled to two conducting leads. Transport in this case is dominated by electron-electron interaction. At temperatures moderately lower than the…
We review the mechanisms of low-temperature electron transport across a quantum dot weakly coupled to two conducting leads. Conduction in this case is controlled by the interaction between electrons. At temperatures moderately lower than…
A new theoretical method is introduced to study coherent electron transport in an interacting multilevel quantum dot. The method yields the correct behavior both in the limit of weak and strong coupling to the leads, giving a unified…
Electron transport through parallel double quantum dot system with interdot tunneling and strong on-site Coulomb interaction is studied in the Kondo regime by using the finite-$U$ slave boson technique. For a system of quantum dots with…
Electron tunneling through a double quantum dot molecule, in the Kondo regime, under the effect of a magnetic field and an applied voltage, is studied. This system possesses a complex response to the applied fields characterized by a…
We study the Kondo effect in multiple-dot systems for which the inter- as well as intra-dot Coulomb repulsions are strong, and the inter-dot tunneling is small. The application of the Ward-Takahashi identity to the inter-dot dynamical…
Correlation effects on electron transport through a system of T-shaped double-dots are investigated, for which only one of the dots is directly connected to the leads. We evaluate the local density of states and the conductance by means of…
We systematically investigate electron transport through double quantum dots with particular emphasis on interference induced via multiple paths of electron propagation. By means of the slave-boson mean-field approximation, we calculate the…
Electron tunneling through a double quantum dot molecule side attached to a quantum wire, in the Kondo regime, is studied. The mean-field finite-U slave-boson formalism is used to obtain the solution of the problem. We found conductance…
The transport properties of a double quantum-dot device with one of the dots coupled to perfect conductors are analyzed using the numerical renormalization group technique and slave-boson mean-field theory. The coupling between the dots…
We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the…
The interplay between the Kondo effect and the inter-dot magnetic interaction in a coupled-dot system is studied. An exact result for the transport properties at zero temperature is obtained by diagonalizing a cluster, composed by the…
Tunneling conductance through two quantum dots, which are connected in series to left and right leads, is calculated by using the numerical renormalization group method. As the hopping between the dots increases from very small value, the…
Electronic transport through a two-path triple-quantum-dot system with two source leads and one drain is studied. By separating the conductance of the two double dot paths, we are able to observe double dot and triple dot physics in…
We report on the observation of Kondo and split Kondo peaks in single-molecule transistors containing a single spin transition molecule with a Fe2+ ion. Coulomb blockade characteristics reveal a double quantum dot behavior in a parallel…
We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a…
Motivated by recent experiments, in which the Kondo effect has been observed for the first time in a double quantum-dot structure, we study electron transport through a system consisting of two ultrasmall, capacitively-coupled dots with…
In a tunneling experiment across a quantum dot it is possible to change the coupling between the dot and the contacts at will, by properly tuning the trasparency of the barriers and the temperature. Gate voltages allow for changes of the…
We review the peculiarities of transport through a quantum dot caused by the spin transition in its ground state. Such transitions can be induced by a magnetic field. Tunneling of electrons between the dot and leads mixes the states…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…