Related papers: Gate-controlled charge transfer in Si:P double qua…
Phosphorus donor spins in silicon offer a number of promising characteristics for the implementation of robust qubits. Amongst various concepts for scale-up, the shared-control concept takes advantage of 3D scanning tunnelling microscope…
The errors caused by qubit displacements from their prescribed locations in an ensemble of spin chains are estimated analytically and calculated numerically for a quantum computer based on phosphorus donors in silicon. We show that it is…
In the semi-conductor double quantum dot singlet-triplet qubit architecture, the decoherence caused by the qubit's charge environment poses a serious obstacle in the way towards large scale quantum computing. The effects of the charge…
We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band…
A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the inter-dot coupling. Transport through excited states is observed in the…
Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and…
Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…
We use charge sensing to detect entropy changes in a double quantum dot defined by electrostatic gating of a GaAs/AlGaAs heterostructure. This system can be tuned to be two separate systems, like two independent, artificial atoms, or a…
Recent progress in quantum computing and networking enables high-performance large-scale quantum processors by connecting different quantum modules. Optical quantum systems show advantages in both computing and communications, and…
Exchange-coupled singlet-triplet spin qubits in two gate-defined double quantum dots are considered theoretically. Using charge density operators to describe the double-dot orbital states, we calculate the Coulomb couplings between the…
We report analytic results on quantum capacitance (C$_{q}$) measurements and their optical tuning in dual-gated device with potassium-doped multi-layered black phosphorous (BP) as the channel material. The two-dimensional (2D) layered BP is…
Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the effect of random interface charge traps in silicon…
We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show…
We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong electric dipole moment on the dot and demonstrate the controlled…
We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point…
We propose a scheme to realize controlled phase gate between two single photons through a single quantum dot in slow-light silicon photonic crystal waveguide. Enhanced Purcell factor and beta factor lead to high gate fidelity over broadband…
We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available…
We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is…
Suspended single-walled carbon nanotube devices comprised of high quality electrical contacts and two electrostatic gates per device are obtained. Compared to nanotubes pinned on substrates, the suspended devices exhibit little hysteresis…
In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the segregation/diffusion of dopant atoms during silicon…