Related papers: Gate-controlled charge transfer in Si:P double qua…
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of…
We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…
We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and…
The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to…
Silicon quantum dot spin qubits have become a promising platform for scalable quantum computing because of their small size and compatibility with industrial semiconductor manufacturing processes. Although Si/SiGe heterostructures are…
We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the…
A nano-shuttle consisting of two metallic islands connected in series and integrated between two contacts is studied. We evaluate the electron transport through the system in the presence of a source-drain voltage with and without an RF…
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on…
We report the realization of a quadruple quantum dot device in a square-like configuration where a single electron can be transferred on a closed path free of other electrons. By studying the stability diagrams of this system, we…
We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
We demonstrate high speed manipulation of a few-electron double quantum dot. In the one-electron regime, the double dot forms a charge qubit. Microwaves are used drive transitions between the (1,0) and (0,1) charge states of the double dot.…
The initial proposal for scalable optical quantum computing required single photon sources, linear optical elements such as beamsplitters and phaseshifters, and photon detection. Here we demonstrate a two qubit gate using indistinguishable…
Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress has been made toward high-fidelity control of quantum dots…
We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qubit gate in a silicon quantum computer. We find the…
A crucial requirement for scalable quantum-information processing is the realization of multiple-qubit quantum gates. Universal multiple-qubit gates can be implemented by a set of universal single qubit gates and any one kind of two-qubit…
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…
Atomic engineering in a solid-state material has the potential to functionalize the host with novel phenomena. STM-based lithographic techniques have enabled the placement of individual phosphorus atoms at selective lattice sites of silicon…