Related papers: Energy Dependent Tunneling in a Quantum Dot
In Coulomb drag, a current flowing in one conductor can induce a voltage across an adjacent conductor via the Coulomb interaction. The mechanisms yielding drag effects are not always understood, even though drag effects are sufficiently…
We present finite bias transport measurements on a few-electron quantum dot. In the Coulomb blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the non-blockaded…
We calculate the dephasing rate of an electron state in a pinched quantum dot, due to Coulomb interactions between the electron in the dot and electrons in a nearby voltage biased ballistic nanostructure. The dephasing is caused by…
Quantum proton tunneling (QPT) in the two representative multi-electron/-proton transfer electrode processes, i.e. hydrogen evolution reaction (HER) and oxygen reduction reaction (ORR), was investigated by using polycrystalline platinum…
We consider the effect of electron-electron interactions on a voltage biased quantum point contact in the tunneling regime used as a detector of a nearby qubit. We model the leads of the quantum point contact as Luttinger liquids,…
We study the Coulomb pseudogap for tunneling into the two-dimensional electron system of high-mobility (Al,Ga)As/GaAs heterojunctions subjected to a quantizing magnetic field at filling factor $\nu \leq 1$. Tunnel current-voltage…
We show that the scaling exponent for tunneling into a quantum wire in the "Coulomb Tonks gas" regime of impenetrable, but otherwise free, electrons is affected by impurity scattering in the wire. The exponent for tunneling into such a wire…
We derive an $n$-resolved Master equation for quantum transport that includes a dependence on the number $n$ of tunneled electrons in system parameters such as tunnel rates and energy levels. We apply the formalism to describe dynamical…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
The tunneling through an opaque barrier with a strong oscillating component is investigated. It is shown, that in the strong perturbations regime (in contrast to the weak one), higher perturbations rate does not necessarily improve the…
We study the dependence of the Kondo temperature on the gate voltage in a strongly blockaded quantum dot with a small single-particle level spacing. We show that the dependence cannot be fitted to that of the Anderson impurity model with…
We use time-resolved charge detection techniques to probe virtual tunneling processes in a double quantum dot. The process involves an energetically forbidden state separated by an energy $\delta$ from the Fermi energy in the leads. The…
In superconducting qubits the lifetime of quantum states cannot be prolonged arbitrarily by decreasing temperature. At low temperature quasiparticles tunneling between electromagnetic environment and superconducting islands takes the…
We analyze time-dependent transport through a quantum dot with electron-electron interaction that is statically tunable to both repulsive and attractive regimes, or even dynamically driven. Motivated by the recent experimental realization…
We address a foundational question in quantum mechanics: Can a particle be directly found in a classically forbidden virtual state? We instantiate this conceptual question by investigating the traversal of electrons through a tunnel…
We investigate cross-correlations in the tunneling currents through two parallel quantum dots coupled to independent electrodes and gates and interacting via an inter-dot Coulomb interaction. The correlations reveal additional information,…
The exact expression for the phase-dependent linear conductance of a weakly damped superconducting quantum point contact is obtained. The calculation is performed by summing up the complete perturbative series in the coupling between the…
Spin-dependent transport through a two-level quantum dot in the sequential tunneling regime is analyzed theoretically by means of a real-time diagrammatic technique. It is shown that the current, tunnel magnetoresistance, and shot noise…
A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…
We show that tunneling through quantum dots can be completely dominated by states quantized on stable bouncing-ball orbits. The fingerprints of bouncing-ball tunneling are sequences of Coulomb blockade peaks with strongly correlated peak…