Related papers: Magneto-resistive memory in ferromagnetic (Ga,Mn)A…
We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the…
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…
We fabricated a nanolayered hybrid superconductor-ferromagnet spin-valve structure, the resistive state of which depends on the preceding magnetic field polarity. The effect is based on a strong exchange bias (about -2 kOe) on a diluted…
During the study of magnetoresistivity in La(1-x)Ca(x)MnO(3) it was found that after cycling of the magnetic field, some kind of magnetic field memory effect was observed. For La0.5Ca0.5MnO3 after cycling of the magnetic field to 13T and…
Recently, several research groups have reported on the observation of super-large more than 5% magneto-strain effect in some non-stoichiometric Ni-Mn-Ga alloys close to 5.78% value expected from the tetragonality aspect ratio of the…
In ferromagnetic alloys with shape memory large reversible strains can be obtained by rearranging the martensitic domain structure by a magnetic field. Magnetization through displacement of domain walls is possible in the presence of high…
We present a theoretical investigation of magnetostatic interaction effects in geometrically frustrated arrays of anisotropic multilayer ferromagnetic nanoparticles arranged in different spatially configured systems with triangular…
We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this…
Magneto-structural instability in the ferromagnetic shape memory alloy of composition Ni$_2$Mn$_{1.4}$Sn$_{0.6}$ is investigated by transport and magnetic measurements. Large negative magnetoresistance is observed around the martensitic…
We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak localization (WL) effects at the lowest temperatures. In…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in…
We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using…
An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining narrow trenches. We found a reversible behavior in the electrical resistance which we…
Magnetic domain memory (MDM) is the ability exhibited by certain magnetic materials to reproduce the exact same nanoscale magnetic domain pattern, even after it has been completely erased by an external magnetic field. In this chapter, we…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting…
We present a theoretical analysis of recent experimental measurements of magnetoresistance in (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. The model reproduces the field-antisymmetric anomalies observed in the longitudinal…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…