Related papers: Theoretical Study on Superconductivity in Boron-Do…
We study the effect of doping the semiconductor with the resonance negative U-centers upon its superconducting transition temperature. The attraction of electrons at the U-centers leads to the enhancement of transition temperature. On the…
The implementation of electron- and hole-doping, in conjunction to applied pressure, is analyzed as a mechanism to induce or enhance the superconducting state on fcc YH$_3$ and ScH$_3$. In particular, the evolution of their structural,…
In the cuprate superconductor $YBa_2Cu_3O_{6+x}$, hole doping in the $CuO_2$ layers is controlled by both oxygen content and the degree of oxygen-ordering. At the composition $\rm YBa_2Cu_3O_{6.35}$, the ordering can occur at room…
We propose a model for high-T$_{c}$ superconductors, valid for $0\leq\delta\leq\delta_{SC}$, that includes both the spin fluctuations of the Cu$^{++}$ magnetic ions and of the O$^{--}$ doped holes. Spin-charge separation is taken into…
Electronic Raman scattering from high- and low-energy excitations was studied as a function of temperature, extent of hole doping, and energy of the incident photons in Bi_2Sr_2CaCu_2O_{8 \pm \delta} superconductors. For underdoped…
Dilute superconductivity survives in bulk strontium titanate when the Fermi temperature falls well below the Debye temperature. Here, we show that the onset of the superconducting dome is dopant-dependent. When mobile electrons are…
The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide…
We investigate the currently debated issue concerning whether transition metal substitutions dope carriers in iron based superconductors. From first-principles calculations of the configuration-averaged spectral function of BaFe$_2$As$_2$…
Pushing dopant concentrations beyond the solubility limit in semiconductors -- a process known as hyperdoping -- has been demonstrated as an effective strategy for inducing superconductivity in cubic-diamond Si and SiGe materials.…
We apply the Coherent Potential Approximation (CPA) to a simple extended Hubbard model with a nearest and next nearest neighbour hopping for disordered superconductors with s-, d- and p-wave pairing. We show how the Van Hove singularities…
Possibility for collectivization of acceptor states in a semiconductor, converting it to metal, is discussed within the scope of Anderson s-d hybride model. This model is generalized for multicomponent band structure and composite acceptor…
In 2007, type-I superconductivity in heavily boron-doped silicon carbide was discovered. The question arose, if it is possible to achieve a superconducting phase by introducing dopants different from boron. Recently, aluminum-doped silicon…
The role of doping in tailoring thermal transport in semiconductors is critical for efficient thermal management in electronic devices. While the effects of doping have been extensively studied to tune electrical properties, its impact on…
We present results on heavily underdoped Y_1-xCa_xBa_2Cu_3O_6+y which provide the evidence that the doping mechanism (cation substitution or oxygen loading) directly determines whether the corresponding injected mobile holes contribute to…
In disordered transition-metal dichalcogenide (TMD) superconductor, both the strong spin-orbit coupling (SOC) and disorder show remarkable effects on superconductivity. However, the features of SOC and disorder were rarely detected…
Expressions for dependences of the pre-exponential factor \sigma_3 and the thermal activation energy \epsilon_3 of hopping electric conductivity of holes via boron atoms on the boron atom concentration N and the compensation ratio K are…
We show that topological superconductivity may emerge upon doping of transition metal dichalcogenide heterobilayers above an integer-filling magnetic state of the topmost valence moir\'e band. The effective attraction between charge…
A series of 122 phase BaFe$_{2-x}$Ni$_x$As$_2$ ($x$ = 0, 0.055, 0.096, 0.18, 0.23) single crystals were grown by self flux method and a dome-like Ni doping dependence of superconducting transition temperature is discovered. The transition…
The influence of the hydrostatic pressure P up to 0.95 GPa on the excess conductivity and the pseudogap {\Delta}*(T) in optimally doped YBCO single crystals (T_c = 91.1K at ambient pressure) is investigated by electrical resistivity…
By using solid state reaction method we have fabricated the hole doped $La_{1-x}Sr_xFeAsO$ superconductors with Sr content up to 0.13. It is found that the sharp anomaly at about 150 K and the low temperature upturn of resistivity are…