English

Specific heat of aluminium-doped superconducting silicon carbide

Superconductivity 2015-05-13 v1

Abstract

The discoveries of superconductivity in heavily boron-doped diamond, silicon and silicon carbide renewed the interest in the ground states of charge-carrier doped wide-gap semiconductors. Recently, aluminium doping in silicon carbide successfully yielded a metallic phase from which at high aluminium concentrations superconductivity emerges. Here, we present a specific-heat study on superconducting aluminium-doped silicon carbide. We observe a clear jump anomaly at the superconducting transition temperature 1.5 K indicating that aluminium-doped silicon carbide is a bulk superconductor. An analysis of the jump anomaly suggests BCS-like phonon-mediated superconductivity in this system.

Keywords

Cite

@article{arxiv.0906.0069,
  title  = {Specific heat of aluminium-doped superconducting silicon carbide},
  author = {M. Kriener and T. Muranaka and Y. Kikuchi and J. Akimitsu and Y. Maeno},
  journal= {arXiv preprint arXiv:0906.0069},
  year   = {2015}
}

Comments

4 pages, 2 figures