Related papers: Spin-polarized transport in ferromagnetic multilay…
Layered systems shows anisotropic transport properties. The interlayer conductivity show a general temperature dependence for a wide class of materials. This can be understood if conduction occurs in two different channels activated at…
A high reproducibility in the performance of cobalt/copper and permalloy/copper lateral spin valves with transparent contacts is obtained by optimizing the interface quality and the purity of copper. This allows us to study comprehensively…
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…
In this work, we present a theoretical study of spin transport in a trilayer pseudospin-valve (PSV) heterostructure composed of electrode (L_l)/insulator/electrode (L_r). The insulating layer corrresponds to a semiconductor (SC) with a…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…
All-solid-state nanoscale devices capable of efficiently controlling a heat flow are crucial for advanced thermal management technologies. Here we predict a magnon-driven magnetothermal resistance (mMTR) effect in multilayers of…
Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with…
We measured spin transport in nonferromagnetic (NM) metallic multilayers from the contribution to damping due to spin pumping from a ferromagnetic Co90Fe10 thin film. The multilayer stack consisted of NM1/NM2/Co90Fe10(2 nm)/NM2/NM3 with…
We consider a quasi one-dimensional configuration consisting of two small pieces of ferromagnetic material separated by a metallic one and contacted by two metallic leads. A spin-polarized current is injected from one lead. Our goal is to…
Electrical transport properties of DyAs epitaxial layers grown on GaAs have been investigated at various temperatures and magnetic fields up to 12T. The measured longitudinal resistances show two distinct peaks at fields around 0.2 and 2.5T…
An electric current flowing in a ferromagnetic metal carries spin angular momentum, i.e. it is spin-polarized. Here, we measure the spin-wave Doppler shift induced by the transfer of angular momentum from the diffusive spin-polarized…
The temperature dependence of the electrical resistivity and magnetoresistance of Xe-ion beam sputtered Fe-Cr multilayers has been investigated. The electrical resistivity between 5 and 300 K in the fully ferromagnetic state, obtained by…
We consider a two dimensional semiconductor with carriers subject to spin-orbit interactions and scattered by randomly distributed magnetic impurities. We solve the time-dependent Schroedinger equation to investigate the relationship…
In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the…
We study electronic transport properties of ferromagnetic nanoparticle arrays and nanodomain materials near the Curie temperature in the limit of weak coupling between the grains. We calculate the conductivity in the Ohmic and non-Ohmic…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
A short overview is given of recent advances in the field of nanosemiconductors, which are suitable as materials for spin polarized transport of charge carriers. On the basis of last theoretical and experimental achievements it is shown…
Helical magnets are emerging as a novel class of materials for spintronics and sensor applications; however, research on their charge and spin transport properties in a thin film form is less explored. Herein, we report the temperature and…