Related papers: Top-gate defined double quantum dots in InAs nanow…
We report the realization of nanotube-based quantum dot structures that use local electrostatic gating to produce individually controllable dots in series along a nanotube. Electrostatic top-gates produce depletion regions in the underlying…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant…
We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods…
We investigate double quantum dots defined by electrostatic gating in semiconductor PbTe nanowire devices. We perform transport measurements to obtain charge stability diagrams distinguished by negligible separation between paired triple…
Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
Double quantum dots (DQDs) hold great promise as building blocks for quantum technology as they allow for two electronic states to coherently couple. Defining QDs with materials rather than using electrostatic gating allows for QDs with a…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices.…
We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to…
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The…
We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…
We report electrical transport measurements through a semiconducting single-walled carbon nanotube (SWNT) with three additional top-gates. At low temperatures the system acts as a double quantum dot with large inter-dot tunnel coupling…
We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…
We study the linear conductance through a double-quantum-dot system consisting of an interacting dot in its Kondo regime and an effectively noninteracting dot, connected in parallel to metallic leads. Signatures in the zero-bias conductance…
We report on correlated real-time detection of individual electrons in an InAs nanowire double quantum dot. Two self-aligned quantum point contacts in an underlying two-dimensional electron gas material serve as highly sensitive charge…
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…
We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly…
The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam…
We present quantum transport measurements of interacting parallel quantum dots formed in the strands of a carbon nanotube rope. In this molecular quantum dot system, transport is dominated by one quantum dot, while additional resonances…
Scattering of carriers between spatially separated zero dimensional states has been observed in a system of self-assembled In_{0.55}Al_{0.45}As quantum dots. We believe the interdot tunneling is mediated by localized states below the…